SDP07N65

Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP07N65 SDF07N65 Ver 3.0 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 650V 7A 1.2 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDP07N65HZ TO-220 SDP07N65PZ TO-220 SDF07N65HZ TO-220F SDF07N65PZ TO-220F Marking Code SDP07N65 07N65 SDF07N65 07N65 Delivery Mode Tube Tube Tube Tube RoHS Status Halogen Free Pb Free Halogen Free Pb Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter SDP07N65 SDF07N65 VDS Drain-Source Voltage VGS Gate-Source Voltage 650 ±30 ±30 ID Drain Current-Continuous a TC=25°C TC=70°C 77 5.9 5.9 IDM -Pulsed a 21 21 EAS Single Pulse Avalanche Energy c 422 PD Maximum Power Dissipation TC=25°C TC=70°C 133 66 93 46 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.1 2.2 °C/W 62.5 62.5 °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDP07N65 SDF07N65 Ver 3.0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Curren...