SDF18N50

Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP18N50 SDF18N50 Ver 1.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 500V 18A 0.25 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDP18N50HZ TO-220 SDP18N50PZ TO-220 SDF18N50HZ TO-220F SDF18N50PZ TO-220F Marking Code SDP18N50 18N50 SDF18N50 18N50 Delivery Mode Tube Tube Tube Tube RoHS Status Halogen Free Pb Free Halogen Free Pb Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter SDP18N50 SDF18N50 VDS Drain-Source Voltage VGS Gate-Source Voltage 500 ±30 ±30 ID Drain Current-Continuous a TC=25°C TC=100°C 18 18 10.8 10.8 IDM -Pulsed a 72 72 EAS Single Pulse Avalanche Energy c 990 PD Maximum Power Dissipation TC=25°C TC=100°C 236 38 94 14.1 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 0.53 3.3 °C/W 62.5 62.5 °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDP18N50 SDF18N50 Ver 1.1 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGS...