Document
SDK03N04Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.3
PRODUCT SUMMARY
VDSS
ID RDS(ON) (Ω) Typ
400V
1.5A
3.5 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-89 Package.
D D
SOT-89
S D G
G S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TA=25°C TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit 400 ±30 1.5 1.2
6 10.4 1.25 0.8
-55 to 150
100
Units V V A A A mJ W W
°C
°C/W
Details are subject to change without notice.
1
Jan,17,2013
www.samhop.com.tw
SDK03N04
Ver 1.3
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=320V , VGS=0V VGS= ±30V , VDS=0V
400
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=10V , ID=1A
2
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V f=1.0MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDD=200V ID=1A VGS=10V RGEN=25 ohm
VDS=200V,ID=1A,VGS=10V
VDS=200V,ID=1A, VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec. b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=1mH,RG=25Ω,VDD = 50V.(See Figure12)
Typ Max Units
1 ±100
V uA nA
2.9 4
V
3.5 4.0 ohm
0.7 S
186 pF 38 pF 7 pF
13 ns 27 ns 55 ns 128 ns 6 nC 1.9 nC 2 nC
1 0.81 1.4
A V
Jan,17,2013
2 www.samhop.com.tw
SDK03N04
ID, Drain Current(A)
RDS(on)(Ω)
4.0 3.5 VGS = 10V
3.0 2.5 2.0 1.5 1.0 0.5
0 0
VGS = 6V VGS = 5.5V VGS = 5V
5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
7
6
5
4
3 VGS = 10V
2
1 1 0.6 1.2 1.8 2.4 3.0
ID, Drain Current (A) Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.2
1.1
V DS =V G S ID=250uA
1.0
0.9
0.8
0.7
0.6 0.5
-50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation with Temperature
Vth, Normalized Gate-Source Threshold Voltage
3
BVDSS, Normalized Drain-Source Breakdown Voltage
RDS(ON), On-Resistance Normalized
ID, Drain Current(A)
Ver 1.3
1.0
0.8
0.6 .