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SDK03N04 Dataheets PDF



Part Number SDK03N04
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet SDK03N04 DatasheetSDK03N04 Datasheet (PDF)

SDK03N04Green Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor Ver 1.3 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 400V 1.5A 3.5 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-89 Package. D D SOT-89 S D G G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TA=25°C TA=70°C IDM -Pulsed b EAS S.

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SDK03N04Green Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor Ver 1.3 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 400V 1.5A 3.5 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-89 Package. D D SOT-89 S D G G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TA=25°C TA=70°C IDM -Pulsed b EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 400 ±30 1.5 1.2 6 10.4 1.25 0.8 -55 to 150 100 Units V V A A A mJ W W °C °C/W Details are subject to change without notice. 1 Jan,17,2013 www.samhop.com.tw SDK03N04 Ver 1.3 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=320V , VGS=0V VGS= ±30V , VDS=0V 400 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=10V , ID=1A 2 DYNAMIC CHARACTERISTICS c CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS=25V,VGS=0V f=1.0MHz SWITCHING CHARACTERISTICS c tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD=200V ID=1A VGS=10V RGEN=25 ohm VDS=200V,ID=1A,VGS=10V VDS=200V,ID=1A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage VGS=0V,IS=1A Notes a.Surface Mounted on FR4 Board,t <_ 10sec. b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=1mH,RG=25Ω,VDD = 50V.(See Figure12) Typ Max Units 1 ±100 V uA nA 2.9 4 V 3.5 4.0 ohm 0.7 S 186 pF 38 pF 7 pF 13 ns 27 ns 55 ns 128 ns 6 nC 1.9 nC 2 nC 1 0.81 1.4 A V Jan,17,2013 2 www.samhop.com.tw SDK03N04 ID, Drain Current(A) RDS(on)(Ω) 4.0 3.5 VGS = 10V 3.0 2.5 2.0 1.5 1.0 0.5 0 0 VGS = 6V VGS = 5.5V VGS = 5V 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 7 6 5 4 3 VGS = 10V 2 1 1 0.6 1.2 1.8 2.4 3.0 ID, Drain Current (A) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 1.1 V DS =V G S ID=250uA 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Vth, Normalized Gate-Source Threshold Voltage 3 BVDSS, Normalized Drain-Source Breakdown Voltage RDS(ON), On-Resistance Normalized ID, Drain Current(A) Ver 1.3 1.0 0.8 0.6 .


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