Document
SDU/D02N60Green
Product
Sa mHop Microelectronics C orp.
Ver 2.2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Max
600V
2A
4.7 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
D
G S
SDU SERIES TO-252(D-PAK)
G DS
SDD SERIES TO-251S(I-PAK)
G DS
SDD SERIES TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU02N60HZ
TO-252
SDD02N60HS
TO-251S
SDD02N60HL
TO-251L
Marking Code SDU02N60 SDD02N60 SDD02N60
Delivery Mode Reel Tube Tube
RoHS Status Halogen Free Halogen Free Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID
Drain Current-Continuous a d
TC=25°C
TC=100°C
IDM -Pulsed b
PD
Maximum Power Dissipation
TC=25°C TC=100°C
Limit 600 ±30
2 1.3 5.8 42
17
Units V V A A A W W
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
3 °C/W 50 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDU/D02N60
Ver 2.2
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=480V , VGS=0V VGS= ±30V , VDS=0V
600
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=20V , ID=1A
2
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V f=1.0MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=300V ID=1A VGS=10V RGEN=6 ohm
VDS=300V,ID=1A,VGS=10V
VDS=300V,ID=1A, VGS=10V
Typ
3 3.6 1.6
300 37 9
17.5 17 21 8 7 1.5 2.9
Max Units
1 ±100
V uA nA
4V 4.7 ohm
S
pF pF pF
ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec. b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%. c.Guaranteed by design, not subject to production testing. d.Drain current limited by maximum junction temperature.
0.79 1.4
V
Dec,24,2013
2 www.samhop.com.tw
SDU/D02N60
ID, Drain Current(A)
RDS(on)( Ω)
5
4 VGS = 10V
3 VGS = 6V
2 VGS = 5V
1
0 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
9.0
7.5
6.0
4.5 3.0 V G S =10V
1.5
0 0.1 0.7 1.4 2.1 2.8 3.5
ID, Drain Current (A) Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
1.4
V DS =V G S ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation with Temperature
Vth, Normalized Gate-Source Threshold Voltage
3
BVDSS, Normalized Drain-Source Breakdown Voltage
RDS(ON), On-Resistance Normalized
ID, Drain Current(A)
Ver 2.2
1.80
1.44
1.08
Tj=125 C
-55 C
0.72
25 C 0.36
0 0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0
2.6
2.2 V G S =10V ID= 1A
1.8
1.4
1.0
0 0 25 50 75 100 125 150 Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with Drain Current and Temperature
1.15 ID=250uA
1.10
1.05
1.00
0.95
0.90 0.85
-50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation with Temperature
Dec,24,2013
www.samhop.com.tw
SDU/D02N60
RDS(on)(Ω)
C, Capacitance (pF)
9.0
ID=1A
7.5 125 C
6.0
4.5 75 C
3.0 25 C
1.5
0 02 4
6 8 10
VGS, Gate-Sorce Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
600
500
400 Ciss
300
200 100 Crss Coss
0 0 10 20 30 40 50
VDS, Drain-to Source Voltage(V)
Figure 9. Capacitance
300 100
10
TD(on)
TD(off ) Tr
Tf
VDS=300V,ID=1A VGS=10V
1 1 10
100
Rg, Gate Resistance(Ω) Figure 11. switching characteristics
Switching Time(ns)
Is, Source-drain current (A)
Ver 2.2
20.0
10.0
125 C 5.0
25 C
75 C
1.0 0
0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage Variation with Source Current
10 8 VDS=300V
ID=1A 6
4
2
0 012 3456 78 Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
VGS, Gate to Source Voltage (V)
10
ID, Drain Current (A)
R DS(ON) Limit
100us 1ms10mDs C
1
0.1
0.01 0.1
VGS=10V Single Pulse
TC=25 C
1 10
100 1000
VDS, Drain-Source Voltage (V)
Figure 12. Maximum Safe Operating Area
Dec,24,2013
4 www.samhop.com.tw
SDU/D02N60
Ver 2.2
V DS
L
RG
20V tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit F igure 13a.
V( BR )D S S tp
IAS
Unclamped Inductive Waveforms F igure 13b.
Normalized Transient Thermal Resistance
2
1 D =0 . 5
0.2
.