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SDU02N60 Dataheets PDF



Part Number SDU02N60
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet SDU02N60 DatasheetSDU02N60 Datasheet (PDF)

SDU/D02N60Green Product Sa mHop Microelectronics C orp. Ver 2.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Max 600V 2A 4.7 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU02N60HZ TO-252 SDD02N60HS TO-251S SDD02N60HL TO-251L .

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SDU/D02N60Green Product Sa mHop Microelectronics C orp. Ver 2.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Max 600V 2A 4.7 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU02N60HZ TO-252 SDD02N60HS TO-251S SDD02N60HL TO-251L Marking Code SDU02N60 SDD02N60 SDD02N60 Delivery Mode Reel Tube Tube RoHS Status Halogen Free Halogen Free Halogen Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a d TC=25°C TC=100°C IDM -Pulsed b PD Maximum Power Dissipation TC=25°C TC=100°C Limit 600 ±30 2 1.3 5.8 42 17 Units V V A A A W W TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 3 °C/W 50 °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDU/D02N60 Ver 2.2 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=480V , VGS=0V VGS= ±30V , VDS=0V 600 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=20V , ID=1A 2 DYNAMIC CHARACTERISTICS c CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS=25V,VGS=0V f=1.0MHz SWITCHING CHARACTERISTICS c tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD=300V ID=1A VGS=10V RGEN=6 ohm VDS=300V,ID=1A,VGS=10V VDS=300V,ID=1A, VGS=10V Typ 3 3.6 1.6 300 37 9 17.5 17 21 8 7 1.5 2.9 Max Units 1 ±100 V uA nA 4V 4.7 ohm S pF pF pF ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1A Notes a.Surface Mounted on FR4 Board,t <_ 10sec. b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%. c.Guaranteed by design, not subject to production testing. d.Drain current limited by maximum junction temperature. 0.79 1.4 V Dec,24,2013 2 www.samhop.com.tw SDU/D02N60 ID, Drain Current(A) RDS(on)( Ω) 5 4 VGS = 10V 3 VGS = 6V 2 VGS = 5V 1 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 9.0 7.5 6.0 4.5 3.0 V G S =10V 1.5 0 0.1 0.7 1.4 2.1 2.8 3.5 ID, Drain Current (A) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 1.4 V DS =V G S ID=250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Vth, Normalized Gate-Source Threshold Voltage 3 BVDSS, Normalized Drain-Source Breakdown Voltage RDS(ON), On-Resistance Normalized ID, Drain Current(A) Ver 2.2 1.80 1.44 1.08 Tj=125 C -55 C 0.72 25 C 0.36 0 0 1.2 2.4 3.6 4.8 6.0 7.2 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 3.0 2.6 2.2 V G S =10V ID= 1A 1.8 1.4 1.0 0 0 25 50 75 100 125 150 Tj( C) Tj, Junction Temperature ( C) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Dec,24,2013 www.samhop.com.tw SDU/D02N60 RDS(on)(Ω) C, Capacitance (pF) 9.0 ID=1A 7.5 125 C 6.0 4.5 75 C 3.0 25 C 1.5 0 02 4 6 8 10 VGS, Gate-Sorce Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 600 500 400 Ciss 300 200 100 Crss Coss 0 0 10 20 30 40 50 VDS, Drain-to Source Voltage(V) Figure 9. Capacitance 300 100 10 TD(on) TD(off ) Tr Tf VDS=300V,ID=1A VGS=10V 1 1 10 100 Rg, Gate Resistance(Ω) Figure 11. switching characteristics Switching Time(ns) Is, Source-drain current (A) Ver 2.2 20.0 10.0 125 C 5.0 25 C 75 C 1.0 0 0.3 0.6 0.9 1.2 1.5 VSD, Body Diode Forward Voltage(V) Figure 8. Body Diode Forward Voltage Variation with Source Current 10 8 VDS=300V ID=1A 6 4 2 0 012 3456 78 Qg, Total Gate Charge(nC) Figure 10. Gate Charge VGS, Gate to Source Voltage (V) 10 ID, Drain Current (A) R DS(ON) Limit 100us 1ms10mDs C 1 0.1 0.01 0.1 VGS=10V Single Pulse TC=25 C 1 10 100 1000 VDS, Drain-Source Voltage (V) Figure 12. Maximum Safe Operating Area Dec,24,2013 4 www.samhop.com.tw SDU/D02N60 Ver 2.2 V DS L RG 20V tp D .U .T IA S 0 .0 1 + - VDD Unclamped Inductive Test Circuit F igure 13a. V( BR )D S S tp IAS Unclamped Inductive Waveforms F igure 13b. Normalized Transient Thermal Resistance 2 1 D =0 . 5 0.2 .


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