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SDD04N60

SamHop Microelectronics

N-Channel MOSFET

SDU/D04N60Green Product Sa mHop Microelectronics C orp. Ver 2.2 N-Channel Logic Level Enhancement Mode Field Effect T...


SamHop Microelectronics

SDD04N60

File Download Download SDD04N60 Datasheet


Description
SDU/D04N60Green Product Sa mHop Microelectronics C orp. Ver 2.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 600V 4A 2.1 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU04N60HZ TO-252 Marking Code SDU04N60 Delivery Mode Reel RoHS Status Halogen Free SDD04N60HS TO-251S SDD04N60 Tube Halogen Free SDD04N60HL TO-251L SDD04N60 Tube Halogen Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a e TC=25°C TC=100°C IDM -Pulsed b EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TC=25°C TC=100°C Limit 600 ±30 4 2.8 11.8 51 83 42 Units V V A A A mJ W W TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1.8 °C/W 50 °C/W Details are subject to change without notice. 1 May,20,2014 www.samhop.com.tw SDU/D04N60 Ver 2.2 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current ...




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