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SDU06N60 Dataheets PDF



Part Number SDU06N60
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet SDU06N60 DatasheetSDU06N60 Datasheet (PDF)

SDU/D06N60Green Product Sa mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 600V 6A 1.18 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU06N60HZ TO-252 SDD06N60HS TO-251S SDD06N60HL TO-251L Ma.

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SDU/D06N60Green Product Sa mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 600V 6A 1.18 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D G S SDU SERIES TO-252(D-PAK) G DS SDD SERIES TO-251S(I-PAK) G DS SDD SERIES TO-251L(I-PAK) ORDERING INFORMATION Ordering Code Package SDU06N60HZ TO-252 SDD06N60HS TO-251S SDD06N60HL TO-251L Marking Code SDU06N60 SDD06N60 SDD06N60 Delivery Mode Reel Tube Tube RoHS Status Halogen Free Halogen Free Halogen Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=100°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TC=25°C TC=100°C TJ, TSTG Operating Junction and Storage Temperature Range Limit 600 ±30 6 4.2 18 430 83 42 -55 to 175 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.8 °C/W 50 °C/W Details are subject to change without notice. 1 Dec,12,2014 www.samhop.com.tw SDU/D06N60 Ver 1.0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=480V , VGS=0V VGS= ±30V , VDS=0V 600 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS b CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS b tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=VGS , ID=250uA VGS=10V , ID=3A VDS=10V , ID=3A VDS=25V,VGS=0V f=1.0MHz VDD=300V ID=1A VGS=10V RGEN= 6 ohm VDS=300V,ID=1A,VGS=10V VDS=300V,ID=1A, VGS=10V 2 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=4A Notes a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=60mH,VDD = 50V.(See Figure13) e.Mounted on FR4 Board of 1 inch2 , 2oz copper. Typ Max Units 1 ±100 V uA nA 34V 1.18 1.48 ohm 9S 950 pF 91 pF 13 pF 30 ns 16 ns 50 ns 15 ns 15 nC 2.4 nC 5.8 nC 0.8 1.4 V Dec,12,2014 2 www.samhop.com.tw ID, Drain Current(A) SDU/D06N60 10 VGS =10V 8 VGS =5V 6 4 2 VGS =4V 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Figure 1. Output Characteristics ID, Drain Current(A) Ver 1.0 3.0 2.4 1.8 T j=125 C 1.2 25 C -55 C 0.6 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, Gate-to-Source Voltage(V) Figure 2. Transfer Characteristics RDS(on)(Ω) 3.0 2.5 2.0 1.5 V GS =10V 1.0 0.5 0 0.1 2 4 6 8 10 ID, Drain Current(A) Figure 3. On-Resistance vs. Drain Current and Gate Voltage RDS(on), On-Resistance Normalized 3.0 2.6 2.2 V G S =10V ID=3A 1.8 1.4 1.0 0 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) T j( C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 V DS =V G S ID=250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 5. Gate Threshold Variation with Temperature 3 BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 6. Breakdown Voltage Variation with Temperature Dec,12,2014 www.samhop.com.tw Vth, Normalized Gate-Source Threshold Voltage SDU/D06N60 RDS(on)(Ω) 4.8 ID= 3A 4.0 3.2 125 C 2.4 75 C 1.6 0.8 25 C 0 0 2 4 6 8 10 VGS, Gate-to-Source Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1800 1500 1200 900 C is s 600 C oss 300 C rss 0 0 10 20 30 40 50 VDS, Drain-to-Source Voltage(V) Figure 9. Capacitance C, Capacitance(pF) VGS, Gate to Source Voltage(V) Is, Source-drain current(A) Ver 1.0 20.0 10.0 125 C 75 C 25 C 1.0 0 0.25 0.50 0.75 1.00 1.25 VSD, Body Diode Forward Voltage(V) Figure 8. Body Diode Forward Voltage Variation with Source Current 10 8 VDS =300V ID= 1A 6 4 2 0 0 5 10 15 20 Qg, Total Gate Charge(nC) Figure 10. Gate Charge Switching Time(ns) 1000 100 10 TD(off) TD(on) Tr Tf VDS=300V, ID=1A VGS=10V 1 1 10 100 Rg, Gate Resistance(Ω) Figure 11. switching characteristics 4 ID, Drain C urrent (A) R DS(ON) Limit 100us 1ms10mDs C 10 1 0.1 0.03 0.1 VGS=10V Single Pulse TC=25 C 1 10 100 1000 V DS , Drain-S ource V oltage (V ) Figure 12. Maximum Safe Operating Area Dec,12,2014 www.samhop.com.tw SDU/D06N60 Ver 1.0 VDS L RG 20V tp D.U.T IAS 0.01 + - VDD Uncamped Inductive Test Circuit Figure 13a. V(BR)DSS tp IAS Unclamped Inductive Waveforms .


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