Document
SDU/D06N60Green
Product
Sa mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
600V 6A 1.18 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
D
G S
SDU SERIES TO-252(D-PAK)
G DS
SDD SERIES TO-251S(I-PAK)
G DS
SDD SERIES TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU06N60HZ
TO-252
SDD06N60HS
TO-251S
SDD06N60HL
TO-251L
Marking Code SDU06N60 SDD06N60 SDD06N60
Delivery Mode Reel Tube Tube
RoHS Status Halogen Free Halogen Free Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C TC=100°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C TC=100°C
TJ, TSTG
Operating Junction and Storage Temperature Range
Limit 600 ±30 6 4.2 18 430 83 42
-55 to 175
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
1.8 °C/W 50 °C/W
Details are subject to change without notice.
1
Dec,12,2014
www.samhop.com.tw
SDU/D06N60
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=480V , VGS=0V VGS= ±30V , VDS=0V
600
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) gFS
Drain-Source On-State Resistance Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF) tf Qg Qgs Qgd
Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS=VGS , ID=250uA VGS=10V , ID=3A VDS=10V , ID=3A
VDS=25V,VGS=0V f=1.0MHz
VDD=300V ID=1A VGS=10V RGEN= 6 ohm
VDS=300V,ID=1A,VGS=10V VDS=300V,ID=1A, VGS=10V
2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=60mH,VDD = 50V.(See Figure13) e.Mounted on FR4 Board of 1 inch2 , 2oz copper.
Typ Max Units
1 ±100
V uA nA
34V 1.18 1.48 ohm
9S
950 pF 91 pF 13 pF
30 ns 16 ns 50 ns 15 ns 15 nC 2.4 nC 5.8 nC
0.8 1.4
V
Dec,12,2014
2 www.samhop.com.tw
ID, Drain Current(A)
SDU/D06N60
10 VGS =10V
8 VGS =5V
6 4 2 VGS =4V 0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
ID, Drain Current(A)
Ver 1.0
3.0
2.4
1.8
T j=125 C
1.2
25 C
-55 C
0.6
0 0 1.0 2.0 3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
RDS(on)(Ω)
3.0
2.5
2.0
1.5 V GS =10V
1.0
0.5
0 0.1 2 4 6 8 10
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
RDS(on), On-Resistance Normalized
3.0
2.6
2.2 V G S =10V ID=3A
1.8
1.4
1.0
0 0 25 50 75 100 125 150
Tj, Junction Temperature(° C ) T j( C )
Figure 4. On-Resistance Variation with Drain Current and Temperature
1.6
1.4
V DS =V G S ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2 -50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation with Temperature
3
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15 ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation with Temperature
Dec,12,2014
www.samhop.com.tw
Vth, Normalized Gate-Source Threshold Voltage
SDU/D06N60
RDS(on)(Ω)
4.8
ID= 3A
4.0
3.2 125 C
2.4 75 C
1.6
0.8 25 C
0 0 2 4 6 8 10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
1800
1500
1200 900
C is s
600 C oss
300
C rss 0
0 10 20 30 40 50
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
C, Capacitance(pF)
VGS, Gate to Source Voltage(V)
Is, Source-drain current(A)
Ver 1.0
20.0 10.0
125 C
75 C
25 C
1.0 0
0.25 0.50 0.75 1.00 1.25
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage Variation with Source Current
10 8 VDS =300V
ID= 1A 6
4
2
0 0 5 10 15 20 Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
Switching Time(ns)
1000
100 10
TD(off) TD(on)
Tr
Tf
VDS=300V, ID=1A VGS=10V
1 1 10
100
Rg, Gate Resistance(Ω) Figure 11. switching characteristics
4
ID, Drain C urrent (A)
R DS(ON) Limit
100us 1ms10mDs C
10
1
0.1
0.03 0.1
VGS=10V Single Pulse
TC=25 C
1 10
100 1000
V DS , Drain-S ource V oltage (V )
Figure 12. Maximum Safe Operating Area
Dec,12,2014
www.samhop.com.tw
SDU/D06N60
Ver 1.0
VDS
L
RG
20V
tp
D.U.T IAS
0.01
+
- VDD
Uncamped Inductive Test Circuit Figure 13a.
V(BR)DSS tp
IAS
Unclamped Inductive Waveforms .