NE5531079A

DATA SHEET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% power added efficiency at 460 MHz under the 7.5 V supply voltage. FEATURES High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) High linear gain : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) Surface mount package : 5.7 × 5.7 × 1.1 mm MAX. Single supply : VDS = 7.5 V MAX. APPLICATIONS 460 MHz band radio systems 900 MHz band radio systems ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form NE5531079A NE5531079A-A 79A (Pb-Free) W5 12 mm wide embossed taping Gate pin face the perforation side of the tape NE5531079A-T1 NE5531079A-T1-A 12 mm wide embossed taping Gate pin face the perforation side of the tape Qty 1 kpcs/reel NE5531079A-T1A NE5531079A-T1A-A 12 mm wide embossed taping Gate pin face the perforation side of the tape Qty 5 kpcs/reel Remark To order evaluation samples, please contact y...