NE55410GR

DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability. FEATURES Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package Over 25 dB gain available by connecting two FET’s in series : GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz) High 1 dB compression output power : PO (1 dB) (Q1) = 35.4 dBm TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : PO (1 dB) (Q2) = 40.4 dBm TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz) High drain efficiency : ηd (Q1) = 52% TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : ηd (Q2) = 46% TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz) Low intermodulation distortion : IM3 (Q1) = −40 dBc TYP. (VDS = 28 V, IDset (Q1+Q2) = 120 mA, f = 2 132.5/2 147.5 MHz, Pout = 33 dBm (2 tones) ) Single Supply (VDS : 3 V < VDS ≤ 32 V) Excellent Thermal Stability Surface mount type...