2SC6095

Ordering number : ENA0411A 2SC6095 Bipolar Transistor 80V, 2.5A, Low VCE(sat), NPN Single PCP http://onsemi.com Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Low collector-to-emitter saturation voltage High allowable power dissipation Large current capacity High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCES VCEO VEBO IC ICP Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 2SC6095-TD-E 1.5 Conditions Ratings Unit 120 V 120 V 80 V 6.5 V 2.5 A 4A Continued on next page. Product & Package Information Package : PCP JEITA, JEDEC : SC-62, SOT-89, TO-243 Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD Marking 1.0 2.5 4.0 QF LOT No. 1 0.4 0.5 2 1.5 3.0 3 0.4 0.75 Bottom View 1 : Base 2 : Collector 3 : Emitter PCP TD Electrical Connection 2 1 3 Semiconductor Components Industries, LLC, 2013 September, 2013 90512 TKIM/53006EA MSIM TB-00002345 No. A0411-1/7 2SC6095 Continued from preceding page. Parameter Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol IB PC Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Tc=25°C Ratings 500 1.3 3.5 150 --55 to +150 Unit mA W W °C °C Stresses exceeding Maximum Ra...