Document
General Purpose Transistors
PNP Silicon
BC856B, BC857B, BC858A
These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications.
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Emitter Voltage
VCEO
V
BC856
−65
BC857
−45
BC858
−30
Collector-Base Voltage
VCBO
V
BC856
−80
BC857
−50
BC858
−30
Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak (1 ms pulse) THERMAL CHARACTERISTICS
VEBO IC ICM
−5.0 −100 −130
V mAdc mA
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C
Thermal Resistance, Junction−to−Ambient
PD RqJA
150
mW
883
°C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in.
www.onsemi.com
COLLECTOR 3
1 BASE
3
1 2
2 EMITTER
SC−70/SOT−323 CASE 419 STYLE 3
MARKING DIAGRAM
XX M G G
1
XX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
May, 2021 − Rev. 5
Publication Order Number: BC856BWT1/D
BC856B, BC857B, BC858A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = −10 mA)
BC856 BC857 BC858
Collector −Emitter Breakdown Voltage (IC = −10 mA, VEB = 0)
BC856 BC857 BC858
Collector −Base Breakdown Voltage (IC = −10 mA)
BC856 BC857 BC858
Emitter −Base Breakdown Voltage (IE = −1.0 mA)
BC856 BC857 BC858
Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain (IC = −10 mA, VCE = −5.0 V)
BC856A, BC585A BC856B, BC857B, BC858B BC857C
(IC = −2.0 mA, VCE = −5.0 V)
BC856A, BC858A BC856B, BC857B, BC858B BC857C
Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA)
Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA)
Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = −10 V, f = 1.0 MHz)
Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
Symbol
Min
Typ
Max Unit
V(BR)CEO
−65
−
−
V
−45
−
−
−30
−
−
V(BR)CES
−80
−
−
V
−50
−
−
−30
−
−
V(BR)CBO
−80
−
−
V
−50
−
−
−30
−
−
V(BR)EBO
−5.0
−
−
V
−5.0
−
−
−5.0
−
−
ICBO
−
−
−15
nA
−
−
−4.0
mA
hFE
−
90
−
−
−
150
−
−
270
−
125
180
250
220
290
475
420
520
800
VCE(sat) −
−
V
−
−0.3
−
−0.65
VBE(sat)
V
−
−0.7
−
−
−0.9
−
VBE(on)
−0.6 −
V
−
−0.75
−
−0.82
fT
100
−
−
MHz
Cob
−
−
4.5
pF
NF
−
−
10
dB
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hFE, NORMALIZED DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (V)
BC856B, BC857B, BC858A
BC857/BC858
2.0 1.5 VCE = -10 V
TA = 25°C 1.0
0.7
0.5
0.3
0.2 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
V, VOLTAGE (VOLTS)
-1.0 -0.9 TA = 25°C -0.8
VBE(sat) @ IC/IB = 10
-0.7
-0.6
VBE(on) @ VCE = -10 V
-0.5
-0.4
-0.3
-0.2
-0.1
VCE(sat) @ IC/IB = 10
0 -0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc)
-50 -100
Figure 2. “Saturation” and “On” Voltages
-2.0 TA = 25°C
-1.6
-1.2
-0.8
IC = -10 mA
-0.4
IC = -50 mA IC = -20 mA
IC = -200 mA IC = -100 mA
0 -0.02
-0.1
-1.0
IB, BASE CURRENT (mA)
-10 -20
Figure 3. Collector Saturation Region
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
1.0 -55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-0.2
-1.0
-10
-100
IC, COLLECTOR CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
10
Cib 7.0
TA = 25°C
5.0
3.0
Cob
2.0
1.0 -0.4 -0.6
-1.0 -2.0 -4.0 -6.0 -10 VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
-20 -30 -40
400 300
200
150
VCE = -10 V
TA = 25°C
100
80
.