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BC858A Dataheets PDF



Part Number BC858A
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP Silicon Transistor
Datasheet BC858A DatasheetBC858A Datasheet (PDF)

General Purpose Transistors PNP Silicon BC856B, BC857B, BC858A These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C unles.

  BC858A   BC858A


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General Purpose Transistors PNP Silicon BC856B, BC857B, BC858A These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO V BC856 −65 BC857 −45 BC858 −30 Collector-Base Voltage VCBO V BC856 −80 BC857 −50 BC858 −30 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak (1 ms pulse) THERMAL CHARACTERISTICS VEBO IC ICM −5.0 −100 −130 V mAdc mA Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Thermal Resistance, Junction−to−Ambient PD RqJA 150 mW 883 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. www.onsemi.com COLLECTOR 3 1 BASE 3 1 2 2 EMITTER SC−70/SOT−323 CASE 419 STYLE 3 MARKING DIAGRAM XX M G G 1 XX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 1 May, 2021 − Rev. 5 Publication Order Number: BC856BWT1/D BC856B, BC857B, BC858A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) BC856 BC857 BC858 Collector −Emitter Breakdown Voltage (IC = −10 mA, VEB = 0) BC856 BC857 BC858 Collector −Base Breakdown Voltage (IC = −10 mA) BC856 BC857 BC858 Emitter −Base Breakdown Voltage (IE = −1.0 mA) BC856 BC857 BC858 Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = −10 mA, VCE = −5.0 V) BC856A, BC585A BC856B, BC857B, BC858B BC857C (IC = −2.0 mA, VCE = −5.0 V) BC856A, BC858A BC856B, BC857B, BC858B BC857C Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) Symbol Min Typ Max Unit V(BR)CEO −65 − − V −45 − − −30 − − V(BR)CES −80 − − V −50 − − −30 − − V(BR)CBO −80 − − V −50 − − −30 − − V(BR)EBO −5.0 − − V −5.0 − − −5.0 − − ICBO − − −15 nA − − −4.0 mA hFE − 90 − − − 150 − − 270 − 125 180 250 220 290 475 420 520 800 VCE(sat) − − V − −0.3 − −0.65 VBE(sat) V − −0.7 − − −0.9 − VBE(on) −0.6 − V − −0.75 − −0.82 fT 100 − − MHz Cob − − 4.5 pF NF − − 10 dB www.onsemi.com 2 hFE, NORMALIZED DC CURRENT GAIN VCE, COLLECTOR-EMITTER VOLTAGE (V) BC856B, BC857B, BC858A BC857/BC858 2.0 1.5 VCE = -10 V TA = 25°C 1.0 0.7 0.5 0.3 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain V, VOLTAGE (VOLTS) -1.0 -0.9 TA = 25°C -0.8 VBE(sat) @ IC/IB = 10 -0.7 -0.6 VBE(on) @ VCE = -10 V -0.5 -0.4 -0.3 -0.2 -0.1 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 Figure 2. “Saturation” and “On” Voltages -2.0 TA = 25°C -1.6 -1.2 -0.8 IC = -10 mA -0.4 IC = -50 mA IC = -20 mA IC = -200 mA IC = -100 mA 0 -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) -10 -20 Figure 3. Collector Saturation Region θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 -0.2 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) Figure 4. Base−Emitter Temperature Coefficient f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 10 Cib 7.0 TA = 25°C 5.0 3.0 Cob 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances -20 -30 -40 400 300 200 150 VCE = -10 V TA = 25°C 100 80 .


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