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BCW68GL Dataheets PDF



Part Number BCW68GL
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP Transistor
Datasheet BCW68GL DatasheetBCW68GL Datasheet (PDF)

BCW68GL General Purpose Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −45 Vdc Collector−Base Voltage VCBO −60 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Con.

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BCW68GL General Purpose Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −45 Vdc Collector−Base Voltage VCBO −60 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −800 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board PD (Note 1) TA = 25°C Derate above 25°C 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient PD RqJA 300 mW 2.4 mW/°C 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. 2 EMITTER 3 1 2 SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM DG MG G DG = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BCW68GLT1G, SOT−23 3000 / Tape & NSVBCW68GLT1G (Pb−Free) Reel BCW68GLT3G SOT−23 10000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 1 November, 2016 − Rev. 8 Publication Order Number: BCW68GLT1/D BCW68GL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) Collector−Emitter Breakdown Voltage (IC = −10 mAdc, VEB = 0) Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) Collector Cutoff Current (VCE= −45 Vdc, IE = 0) (VCE= −45 Vdc, IB = 0, TA = 150°C) Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0) ON CHARACTERISTICS V(BR)CEO −45 − − Vdc V(BR)CES −60 − − Vdc V(BR)EBO −5.0 − − Vdc ICES IEBO − − −20 nAdc − − −10 mAdc − − −20 nAdc DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) (IC = −300 mAdc, VCE = −1.0 Vdc) Collector−Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) Base−Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) SMALL−SIGNAL CHARACTERISTICS hFE − 120 − 400 160 − − 60 − − VCE(sat) − − −0.7 Vdc VBE(sat) − − −2.0 Vdc Current−Gain − Bandwidth Product (IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz) fT 100 − − MHz Output Capacitance (VCB= −10 Vdc, IE = 0, f = 1.0 MHz) Cobo − − 18 pF Input Capacitance (VEB= −0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − − 105 pF Noise Figure (IC= −0.2 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 hFE, DC CURRENT GAIN BCW68GL TYPICAL CHARACTERISTICS VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 500 150°C 400 300 25°C 200 −55°C 100 VCE = 1 V 1 IC/IB = 10 0.1 25°C 150°C −55°C 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current 1.1 1.0 IC/IB = 10 0.9 0.8 0.7 0.6 0.5 −55°C 25°C 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current 1000 VCE = 1 V TA = 25°C VBE(on), BASE−EMITTER VOLTAGE (V) 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1.2 1.1 VCE = 5 V 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 4. Base Emitter Voltage vs. Collector Current 100 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) 10 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 5. Current Gain Bandwidth Product vs. Collector Current www.onsemi.com 3 θV, TEMPERATURE COEFFICIENTS (mV/°C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) C, CAPACIT.


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