Document
BCW68GL
General Purpose Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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COLLECTOR 3
1 BASE
MAXIMUM RATINGS Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
−45
Vdc
Collector−Base Voltage
VCBO
−60
Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−800
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
PD
(Note 1) TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C
Thermal Resistance, Junction−to−Ambient
PD RqJA
300
mW
2.4
mW/°C
417
°C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150
°C
1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
2 EMITTER
3
1 2
SOT−23 CASE 318 STYLE 6
MARKING DIAGRAM
DG MG G
DG = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BCW68GLT1G,
SOT−23 3000 / Tape &
NSVBCW68GLT1G (Pb−Free)
Reel
BCW68GLT3G
SOT−23 10000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
November, 2016 − Rev. 8
Publication Order Number: BCW68GLT1/D
BCW68GL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0)
Collector−Emitter Breakdown Voltage (IC = −10 mAdc, VEB = 0)
Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0)
Collector Cutoff Current (VCE= −45 Vdc, IE = 0) (VCE= −45 Vdc, IB = 0, TA = 150°C)
Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
−45
−
−
Vdc
V(BR)CES
−60
−
−
Vdc
V(BR)EBO
−5.0
−
−
Vdc
ICES IEBO
−
−
−20 nAdc
−
−
−10 mAdc
−
−
−20 nAdc
DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) (IC = −300 mAdc, VCE = −1.0 Vdc)
Collector−Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc)
Base−Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
hFE
−
120
−
400
160
−
−
60
−
−
VCE(sat)
−
−
−0.7
Vdc
VBE(sat)
−
−
−2.0
Vdc
Current−Gain − Bandwidth Product (IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz)
fT
100
−
−
MHz
Output Capacitance (VCB= −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
−
18
pF
Input Capacitance (VEB= −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
−
105
pF
Noise Figure (IC= −0.2 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
−
−
10
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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hFE, DC CURRENT GAIN
BCW68GL
TYPICAL CHARACTERISTICS
VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V)
500 150°C
400
300 25°C
200 −55°C
100
VCE = 1 V
1 IC/IB = 10
0.1
25°C
150°C −55°C
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector Current
1.1
1.0
IC/IB = 10
0.9
0.8
0.7
0.6
0.5
−55°C 25°C 150°C
0.4
0.3
0.2
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs. Collector Current
1000
VCE = 1 V TA = 25°C
VBE(on), BASE−EMITTER VOLTAGE (V)
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage vs. Collector Current
1.2
1.1 VCE = 5 V 1.0 0.9
−55°C
0.8 25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector Current
100
VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V)
fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz)
10
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain Bandwidth Product vs. Collector Current
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θV, TEMPERATURE COEFFICIENTS (mV/°C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
C, CAPACIT.