Document
BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G
Plastic Medium-Power Silicon NPN Darlingtons
This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications.
Features
• High DC Current Gain • Monolithic Construction • Complementary to BD676, 676A, 678, 678A, 680, 680A, 682 • BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803 • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G
VCEO
Vdc
45
60
80
100
Collector−Base Voltage BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G
VCBO
Vdc
45
60
80
100
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25°C Derate above 25°C
VEBO IC IB PD
5.0 4.0 1.0
40 0.32
Vdc Adc Adc
W W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg – 55 to + 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction−to−Case RqJC
3.13
Unit °C/W
http://onsemi.com
4.0 AMPERES POWER TRANSISTORS
NPN SILICON 60, 80, 100 VOLTS, 40 WATTS
COLLECTOR 2, 4
BASE 3
EMITTER 1
123
TO−225 CASE 77−09
STYLE 1
MARKING DIAGRAMS
YWW BD6xxG
YWW BD6xxAG
BD6xx/BD6xxA = Device Code
x = 75, 77, 79, 81
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 15
Publication Order Number: BD675/D
BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (Note 1) (IC = 50 mAdc, IB = 0) BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G
BVCEO
Vdc
45
−
60
−
80
−
100
−
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO, IE = 0, TC = 100’C)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Currert Gain, (Note 1) (IC = 1.5 Adc,VCE = 3.0 Vdc) BD675G, BD677G, BD679G, BD681G (IC = 2.0 Adc, VCE = 3.0 Vdc) BD675AG, BD677AG, BD679AG
ICEO −
ICBO − −
IEBO −
hFE
750
750
mAdc 500
mAdc 0.2 2.0
mAdc 2.0
−
−
−
Collector−Emitter Saturation Voltage, (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc) BD677G, BD679G, BD681G
(IC = 2.0 Adc, IB = 40 mAdc) BD675AG, BD677AG, BD679AG
VCE(sat) −
−
.