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BD675AG Dataheets PDF



Part Number BD675AG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description NPN Transistor
Datasheet BD675AG DatasheetBD675AG Datasheet (PDF)

BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain • Monolithic Construction • Complementary to BD676, 676A, 678, 678A, 680, 680A, 682 • BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803 • These Devices are Pb−Free and are RoHS Compliant* MA.

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BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain • Monolithic Construction • Complementary to BD676, 676A, 678, 678A, 680, 680A, 682 • BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G VCEO Vdc 45 60 80 100 Collector−Base Voltage BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G VCBO Vdc 45 60 80 100 Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VEBO IC IB PD 5.0 4.0 1.0 40 0.32 Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction−to−Case RqJC 3.13 Unit °C/W http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON 60, 80, 100 VOLTS, 40 WATTS COLLECTOR 2, 4 BASE 3 EMITTER 1 123 TO−225 CASE 77−09 STYLE 1 MARKING DIAGRAMS YWW BD6xxG YWW BD6xxAG BD6xx/BD6xxA = Device Code x = 75, 77, 79, 81 Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 December, 2013 − Rev. 15 Publication Order Number: BD675/D BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage, (Note 1) (IC = 50 mAdc, IB = 0) BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G BVCEO Vdc 45 − 60 − 80 − 100 − Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0) Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO, IE = 0, TC = 100’C) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS DC Currert Gain, (Note 1) (IC = 1.5 Adc,VCE = 3.0 Vdc) BD675G, BD677G, BD679G, BD681G (IC = 2.0 Adc, VCE = 3.0 Vdc) BD675AG, BD677AG, BD679AG ICEO − ICBO − − IEBO − hFE 750 750 mAdc 500 mAdc 0.2 2.0 mAdc 2.0 − − − Collector−Emitter Saturation Voltage, (Note 1) (IC = 1.5 Adc, IB = 30 mAdc) BD677G, BD679G, BD681G (IC = 2.0 Adc, IB = 40 mAdc) BD675AG, BD677AG, BD679AG VCE(sat) − − .


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