SMS6001

Elektronische Bauelemente SMS6001 440mA, 60V, RDS(ON) 2Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage ESD Rating: 2KV HBM APPLICATION DC-DC converter circuit Load Switch DEVICE MARKING: W61* * = Date Code PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7’ inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20 0.6 REF. 0.95 BSC. Pin Configuration (Top View) MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Drain – Source Voltage Gate – Source Voltage Continuous Drain Current 1.4 TA= 25°C TA= 70°C Power Dissipation 1.4 TA= 25°C TA= 70°C Continuous Drain Current 2.4 TA= 25°C TA= 70°C Power Dissipation 2.4 Pulsed Drain Current 3 TA= 25°C TA= 70°C Maximum Junction-to-Lead Operating Junction & Storage Temperature Range VDS VGS ID PD ID PD IDM RθJL TJ, TSTG 10S 0.5 0.4 0.69 0.44 0.47 0.38 0.6 0.39 Rating Steady State 60 ±20 0.4...