Elektronische Bauelemente
SMUN52XXDW
NPN Multi-Chip Built-in Resistors Transistor
The BRT (Bias Resistor Transistor) c...
Elektronische Bauelemente
SMUN52XXDW
NPN Multi-Chip Built-in Resistors
Transistor
The BRT (Bias Resistor
Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital
transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the SMUN5211DW series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
Simplifies Circuit Design Reduces Board Space Reduces Component Count Pb-Free Package is available
6 54
Q2 R1 R2
R2 R1
Q1
12
3
MARKING DIAGRAM
6 54
7X
1 23
7X = Device Marking
.055(1.40) .047(1.20)
SOT-363
.026TYP (0.65TYP)
.021REF (0.525)REF
8o 0o
.096(2.45) .085(2.15)
.053(1.35) .045(1.15)
.014(0.35) .006(0.15) .087(2.20) .079(2.00)
.043(1.10) .035(0.90)
.018(0.46) .010(0.26)
.006(0.15) .003(0.08)
.004(0.10) .000(0.00)
.039(1.00) .035(0.90)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current
Symbol V CBO V CEO IC
Value 50 50 100
Unit Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambien...