SMUN5231DW Resistors Transistor Datasheet

SMUN5231DW Datasheet, PDF, Equivalent


Part Number

SMUN5231DW

Description

NPN Multi-Chip Built-in Resistors Transistor

Manufacture

SeCoS

Total Page 8 Pages
Datasheet
Download SMUN5231DW Datasheet


SMUN5231DW
Elektronische Bauelemente
SMUN52XXDW
NPN Multi-Chip
Built-in Resistors Transistor
The BRT (Bias Resistor Transistor) contains a single transistor
with a monolithic bias network consisting of two resistors; a series
base resistor and a base–emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them
into a single device. In the SMUN5211DW series, two BRT devices are
housed in the SOT–363 package which is ideal for low power surface
mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
6 54
Q2 R1 R2
R2
R1
Q1
12
3
MARKING DIAGRAM
6 54
7X
1 23
7X = Device Marking
.055(1.40)
.047(1.20)
SOT-363
.026TYP
(0.65TYP)
.021REF
(0.525)REF
8o
0o
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V CBO
V CEO
IC
Value
50
50
100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Total Device Dissipation T A = 25°C
Derate above 25°C
Thermal Resistance – Junction-to-Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation T A = 25°C
Derate above 25°C
Thermal Resistance – Junction-to-Ambient
Thermal Resistance – Junction-to-Lead
Junction and Storage Temperature
Symbol
PD
R JA
Symbol
PD
R θJA
R θJL
T J , T stg
Max
Note 1 Note 2
187 256
1.5 2.0
670 490
Max
Note 1
Note 2
250 385
2.0 3.0
493 325
188 208
–55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C/W
°C
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
http://www.SeCoSGmbH.com
22-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 1 of 8

SMUN5231DW
Elektronische Bauelemente
SMUN52XXDW
NPN Multi-Chip
Built-in Resistors Transistor
DEVICE MARKING , RESISTOR VALUES AND ORDERING INFORMATION
Device
Package
Marking
R1(K)
R2(K)
SMUN5211DW
SMUN5212DW
SMUN5213DW
SOT-363
SOT-363
SOT-363
7A
7B
7C
10 10
22 22
47 47
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
7D
7E
7F
7G
7H
10 47
10 open
4.7 open
11
2.2 2.2
SMUN5232DW
SOT-363
7J
4.7 4.7
SMUN5233DW
SOT-363
7K
4.7 47
SMUN5234DW
SOT-363
7L
22 47
SMUN5235DW
SOT-363
7M
2.2 47
SMUN5236DW
SOT-363
7N
100 100
SMUN5237DW
SOT-363
7P
47 22
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V CB = 50 V, I E = 0)
Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0)
Emitter-Base Cutoff Current
SMUN5211DW
(V EB = 6.0 V, I C = 0)
SMUN5212DW
SMUN5213DW
I CBO
I CEO
I EBO
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
SMUN5236DW
SMUN5237DW
Collector-Base Breakdown Voltage (I C = 10 A, I E = 0)
Collector-Emitter Breakdown Voltage(Note 4.)(IC = 2.0 mA,I B=0)
V (BR)CBO
V (BR)CEO
4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Min
50
50
Typ Max
– 100
– 500
– 0.5
– 0.2
– 0.1
– 0.2
– 0.9
– 1.9
– 4.3
– 2.3
– 1.5
– 0.18
– 0.13
– 0.2
– 0.05
– 0.13
––
––
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
http://www.SeCoSGmbH.com
22-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 2 of 8


Features Elektronische Bauelemente SMUN52XXDW NP N Multi-Chip Built-in Resistors Transis tor The BRT (Bias Resistor Transistor) contains a single transistor with a mo nolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digita l transistors are designed to replace a single device and its external resisto r bias network. The BRT eliminates thes e individual components by integrating them into a single device. In the SMUN5 211DW series, two BRT devices are house d in the SOT–363 package which is ide al for low power surface mount applicat ions where board space is at a premium. • Simplifies Circuit Design • Redu ces Board Space • Reduces Component C ount • Pb-Free Package is available 6 54 Q2 R1 R2 R2 R1 Q1 12 3 MARKI NG DIAGRAM 6 54 7X 1 23 7X = Device Mar king .055(1.40) .047(1.20) SOT-363 .0 26TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) . 045(1.15) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90.
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