SZM-2166Z

SZM-2166Z 2.3GHz to 2.7GHz 2W Power Ampli- SZM-2166Zfier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for 802.16 customer premises equipment (CPE) terminals in the 2.3GHz to 2.7GHz bands. It can run from a 3V to 6V supply. The external output match and bias adjustability allows load line optimization for other applications over narrower bands. It features an output power detector, on/off power control, and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte finish, designated by the “Z” suffix Optimum Technology Matching® Applied GaAs HBT GaAs MESFET  InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Vcc = 5V RFIN Vbias = 5V Stage 1 Bias Pow er Up/Dow n Control Stage 2 Bias Stage 3 Bias Pow er Detector RFOUT Features  P1dB=35dBm at 6V  Three Stages of Gain: 37dB  802.11g 54Mb/s Class AB Per- formance  POUT=27dBm at 2.5%EVM, VCC 6V, 878mA  Active Bias with Adjustable Cur- rent  On-Chip Outpu...