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SGB-6433Z

RF Micro Devices

DC to 3.5GHz ACTIVE BIAS GAIN BLOCK

SGB-6433(Z)SGB-6433(Z) DC to 3.5GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ...


RF Micro Devices

SGB-6433Z

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Description
SGB-6433(Z)SGB-6433(Z) DC to 3.5GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description RFMD’s SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the SGB-6433 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-6433 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is on chip matched to 50Ω and an external bias inductor choke is required for the application band. Optimum Technology Matching® Applied Vbias NC NC VCC GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS 9 SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS NC NC RFIN NC Active Bias NC NC RFOUT NC Features „ High Reliability SiGe HBT Technology „ Robust Class 1C ESD „ Simple and Small Size „ P1dB=18.5dBm at 1950MHz „ IP3=31dBm at 1950MHz „ Low Thermal Resistance = 60 C/W Applications „ 5V Applications „ LO Buffer Amp „ RF Pre-Driver and RF Receive Path NC NC NC GND Parameter Specification Min. Typ. Small Signal Gain 20.0 14.5 16.0 15.0 Output Power at 1dB Compression 18.5 16.5 18.5 17.5 Output Third Order Int...




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