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SGC-6289Z

RF Micro Devices

high performance SiGe HBT MMIC amplifier

NOT FOR NEW dB DESIGNS NOT FOR NEW DESIGNS SGC-6289Z 50MHz to 3500MHz SILICON GERMANIUM ACTIVE BIAS GAIN BLOCK Package...


RF Micro Devices

SGC-6289Z

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Description
NOT FOR NEW dB DESIGNS NOT FOR NEW DESIGNS SGC-6289Z 50MHz to 3500MHz SILICON GERMANIUM ACTIVE BIAS GAIN BLOCK Package: SOT-89 Product Description RFMD’s SGC-6289Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SGC-6289Z does not require a dropping resistor as compared to traditional Darlington amplifiers. The SGC-6289Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Gain, RL & NF versus Frequency 30 20 S21 10 0 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25°C -10 S22 -20 S11 -30 -40 0.0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) Gain IRL ORL 3.0 3.5 Features  Single Supply Operation: 5V at ID = 83mA  No Dropping Resistor Required  Patented Self Bias Circuitry  Gain = 13.5dBm at 1950MHz  P1dB = 19.2dBm at 1950MHz  IP3 = 33.5dBm at 1950MHz  Robust 1000V ESD, Class 1C HBM Applications  PA Driver Amplifier  Cellular, PCS, GSM, UMTS  IF Amplifier  Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 14.0 dB 500MHz 12.5 14.0 15.5 dB 850MHz* 12.0 13.5 ...




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