SPF5122Z 50MHz to 4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier
SPF5122Z
50MHz to 4000MHz, GaAs pHEMT LOW NOISE
MMIC AMPLIFIER
Product Description
The SPF5122Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5122Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers.
Gain (dB) NF (dB)
Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT
GaAs pHEMT
Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS
Gain and NF versus Frequency
Broadband Application Circuit (5V, 90mA)
25.0
4.00
22.0
3.50
19.0
3.00
16.0
2.50
13.0
2.00
10.0
1.50
7.0 1.00
4.0 Gain 0.50
NF 1.0 0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
Features
Ultra-Low Noise Figure=0.60dB at 900MHz
Gain=18.9dB at 900MHz High Linearity: OIP3=40.5dBm
at 1900MHz Channel Power=13.4dBm (-
65dBc IS95 ACPR, 880MHz) P1dB=23.4dBm at 1900MHz Single-Supply Operation: 5V at
IDQ = 90 mA Flexible Biasing Options: 3-5V,
Adjustable Current Broadband Internal Matching
Applications
Cellular, PCS, W-CDMA, ISM, WiMAX Receivers
PA Driver Amplifier Low Noise, High Linearity Gain
Block Applications
Parameter
Specification Min. Typ. Max.
Unit
Condition
Small Signal Power Gain
17.2
18.9
20.2
dB 0.9GHz
11.2
12.2
14.4 dB 1.96GHz
Output Power at 1dB Compression
20.8
22.8
dBm
0.9 GHz
21.4
23.4
dBm
1.9 GHz
Output Third Order Intercept Point
35.1
38.1
dBm
0.9 GHz
37.2 40.5
dBm
1.9 GHz
Noise Figure
0.59
0.85
dB 0.9GHz
0.65
0.9 dB 1.9GHz
Input Return Loss
10 14.3
dB 0.9 GHz
21 dB 1.9GHz
Output Return Loss
14 17
dB 0.9GHz
13 dB 1.9GHz
Reverse Isolation
24.1 dB 0.9GHz
18.4
dB 1.9GHz
Device Operating Voltage
5.00
5.25
V
Device Operating Current
75 90 105 mA Quiescent
Thermal Resistance
65
°C/W
Junction to lead
Test Conditions: VD=5V, IDQ=90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, ZS=ZL=50, 25°C, Broadband Application Circuit
DS110408
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or
[email protected].
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SPF5122Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (lD) Max Device Voltage (VD) Max RF Input Power
120 mA 5.5 V 27 dBm
Max Dissipated Power
660 mW
Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temperature
150 -40 to + 85 -65 to +150
°C °C °C
ESD Rating - Human Body Model (HBM)
Class 1B
Moisture Sensitivity Level (MSL)
MSL 1
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder.
Typical RF Performance - Broadband Application Circuit with VD=5V, ID=90mA
Parameter Unit 0.1 0.4 0.9 1.5 1.9 2.2 2.5 3.5
GHz* GHz GHz GHz GHz GHz GHz GHz
Small Signal Gain dB 27.0 24.0 19.0 15.0 13.0 12.0 11.0
6.0
Noise Figure
dB 0.42 0.47 0.59 0.70 0.64 0.73 0.86 1.35
Output IP3
dBm
33.0
36.0
38.0
39..