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SPF5122Z Dataheets PDF



Part Number SPF5122Z
Manufacturers RF Micro Devices
Logo RF Micro Devices
Description GaAs pHEMT LOW NOISE MMIC AMPLIFIER
Datasheet SPF5122Z DatasheetSPF5122Z Datasheet (PDF)

SPF5122Z 50MHz to 4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5122Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description The SPF5122Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5122Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and .

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SPF5122Z 50MHz to 4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5122Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description The SPF5122Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5122Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers. Gain (dB) NF (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT  GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Gain and NF versus Frequency Broadband Application Circuit (5V, 90mA) 25.0 4.00 22.0 3.50 19.0 3.00 16.0 2.50 13.0 2.00 10.0 1.50 7.0 1.00 4.0 Gain 0.50 NF 1.0 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency (GHz) Features  Ultra-Low Noise Figure=0.60dB at 900MHz  Gain=18.9dB at 900MHz  High Linearity: OIP3=40.5dBm at 1900MHz  Channel Power=13.4dBm (- 65dBc IS95 ACPR, 880MHz)  P1dB=23.4dBm at 1900MHz  Single-Supply Operation: 5V at IDQ = 90 mA  Flexible Biasing Options: 3-5V, Adjustable Current  Broadband Internal Matching Applications  Cellular, PCS, W-CDMA, ISM, WiMAX Receivers  PA Driver Amplifier  Low Noise, High Linearity Gain Block Applications Parameter Specification Min. Typ. Max. Unit Condition Small Signal Power Gain 17.2 18.9 20.2 dB 0.9GHz 11.2 12.2 14.4 dB 1.96GHz Output Power at 1dB Compression 20.8 22.8 dBm 0.9 GHz 21.4 23.4 dBm 1.9 GHz Output Third Order Intercept Point 35.1 38.1 dBm 0.9 GHz 37.2 40.5 dBm 1.9 GHz Noise Figure 0.59 0.85 dB 0.9GHz 0.65 0.9 dB 1.9GHz Input Return Loss 10 14.3 dB 0.9 GHz 21 dB 1.9GHz Output Return Loss 14 17 dB 0.9GHz 13 dB 1.9GHz Reverse Isolation 24.1 dB 0.9GHz 18.4 dB 1.9GHz Device Operating Voltage 5.00 5.25 V Device Operating Current 75 90 105 mA Quiescent Thermal Resistance 65 °C/W Junction to lead Test Conditions: VD=5V, IDQ=90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, ZS=ZL=50, 25°C, Broadband Application Circuit DS110408 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 12 SPF5122Z Absolute Maximum Ratings Parameter Rating Unit Max Device Current (lD) Max Device Voltage (VD) Max RF Input Power 120 mA 5.5 V 27 dBm Max Dissipated Power 660 mW Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temperature 150 -40 to + 85 -65 to +150 °C °C °C ESD Rating - Human Body Model (HBM) Class 1B Moisture Sensitivity Level (MSL) MSL 1 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Typical RF Performance - Broadband Application Circuit with VD=5V, ID=90mA Parameter Unit 0.1 0.4 0.9 1.5 1.9 2.2 2.5 3.5 GHz* GHz GHz GHz GHz GHz GHz GHz Small Signal Gain dB 27.0 24.0 19.0 15.0 13.0 12.0 11.0 6.0 Noise Figure dB 0.42 0.47 0.59 0.70 0.64 0.73 0.86 1.35 Output IP3 dBm 33.0 36.0 38.0 39..


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