STA-5063Z linear amplifier Datasheet

STA-5063Z Datasheet, PDF, Equivalent


Part Number

STA-5063Z

Description

general purpose class A linear amplifier

Manufacture

RF Micro Devices

Total Page 10 Pages
Datasheet
Download STA-5063Z Datasheet


STA-5063Z
STA-5063Z
3.3GHz to
6.2GHz Gen-
eral Purpose
3.3V 15 dBm
Amplifier
STA-5063Z
3.3GHz to 6.2GHz GENERAL PURPOSE 3.3V
15dBm AMPLIFIER
Package: SOT-363, 2.0mmx2.1mm
Product Description
RFMD’s STA-5063Z is a general purpose class A linear amplifier which utilizes
InGaP GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost
surface- mountable plastic package. This product is specifically designed as a
driver amplifier for WLAN 802.11a and 5.8GHz ISM band and 3.3GHz to 3.8GHz
fixed wireless applications. It can run from a fixed 3.0V to 3.6V supply with its on
chip active bias network which includes a power up and down control. On-chip
impedance matching circuitry provides a 50nominal RF input and output imped-
ance. Its high linearity makes it an ideal choice for multicarrier and digital applica-
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
tions. Housed in an industry standard SOT-363 package, it has
no blind solder joints and designed for low cost. This product is
offered in a RoHS Compliant and Green package with matte
tin finish, designated by the “Z” package suffix.
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
BiFET HBT
LDMOS
Features
Linear Class A Performance
P1dB=17.5dBm at 3.5GHz
P1dB=15dBm at 5.9GHz
IP3=30dBm at 3.5GHz
IP3=27dBm at 5.9GHz
Power Up/Down Control<1uS
Active Bias Controlled
Robust Class 1C ESD Rating
Applications
Driver Stage for 802.11a
Access Points
Wimax 802.16 Driver Stage
Low Power 5.8GHz ISM Out-
put Stage
Fixed Wireless, UNII Driver
Stage
Parameter
Specification
Min. Typ. Max.
Small Signal Gain
17.5 19.0 21.0
13.2
14.7
16.7
12.5
14.0
16.0
Output Power at 1dB Compression
17.5
15.0
13.5
15.0
Output Third Order Intercept Point
28.0
30.0
25.0
27.0
Frequency of Operation
3.3
6.2
Noise Figure
9.0 10.5
Input VSWR
1.5 2.0
Output VSWR
2.0 2.6
Total Device Current
42.0
52.0
62.0
Thermal Resistance
150
Test Conditions: Evaluation Board, Z0=50, VCC=3.3V, IQ=52mA, T=25°C
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
GHz
dB
mA
°C/W
Condition
3.5GHz with 3GHz app circuit
5.1GHz with 5GHz app circuit
5.9GHz with 5GHz app circuit
3.5GHz with 3GHz app circuit
5.1GHz with 5GHz app circuit
5.9GHz with 5GHz spp circuit
3.5 GHz
5.9 GHz
5.9 GHz
5.1GHzto5.9GHz for 5GHz app circuit
5.1GHzto5.9GHz for 5GHz app circuit
junction to backside
DS110205
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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STA-5063Z
STA-5063Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (lD)
ESD Rating (HBM)
80
1000
mA
V
Total Device Current (I)
80 mA
Device Voltage (Pins 1 and 3)
4V
Device Voltage (Pin 4)
5.5 V
Max RF Input Power
15 dBm
Power Dissipation
0.40
W
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
150
-40 to + 85
- 40 to + 150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Simplified Device Schematic
PIN 3
PIN 1
PIN 4
Active Bias
PIN 2 PIN 5 PIN 6
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110205


Features STA-5063Z 3.3GHz to 6.2GHz General Purpo se 3.3V 15 dBm Amplifier STA-5063Z 3. 3GHz to 6.2GHz GENERAL PURPOSE 3.3V 15d Bm AMPLIFIER Package: SOT-363, 2.0mmx2 .1mm Product Description RFMD’s STA -5063Z is a general purpose class A lin ear amplifier which utilizes InGaP GaA s Heterojunction Bipolar Transistor (HB T) amplifier housed in a low-cost surf ace- mountable plastic package. This pr oduct is specifically designed as a dr iver amplifier for WLAN 802.11a and 5.8 GHz ISM band and 3.3GHz to 3.8GHz fixe d wireless applications. It can run fro m a fixed 3.0V to 3.6V supply with its on chip active bias network which incl udes a power up and down control. On-ch ip impedance matching circuitry provid es a 50 nominal RF input and output impedance. Its high linearity makes it an ideal choice for multicarrier and di gital applica- Optimum Technology Matc hing® Applied GaAs HBT GaAs MESFET  InGaP HBT tions. Housed in an industr y standard SOT-363 package, it has no blind solder joints and designed.
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