SXA-389

SXA-389(Z) 400MHz to 2500 MHz ¼W Medium Power GaAs HBT Amplifier with Active Bias SXA-389(Z) 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to2500MHz cellular, ISM, WLL, PCS, W-CDMA applications. Optimum Technology Matching® Applied 9 GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS dBm Typical IP3, P1dB, Gain 50 45 OIP3 P1dB 40 Gain 35 30 25 20 15 10 5 0 850 MHz 1960 MHz 2140 MHz 2450 MHz Features „ Available in RFMD Green, RoHS Compliant, and Pb-Free (Z Part Number) „ On-Chip Active Bias Control, Single 5V Supply „ High Output 3rd Order Intercept:+42to+44dBm Typ. „ High P1dB :+25dBm Typ. „ High Gain:+19dB at 850MHz „ High Efficiency: Consumes Only 600 mW „ Patented High Reliability GaAs HBT Technology „ Surface-Mountable Power Plastic Package Applications „ W-CDMA, PCS, Cellular Systems „ High Linearity IF Amplifiers „ Multi-Carrier Applications Parameter Small Signal Gain Output Power at 1dB Compression Outpu...