SXA389BZ

SXA389BZ 400MHz to 2500 MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias SXA389BZ 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plas- tic package. These HBT MMICs are fabricated using molecular beam epi- taxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are spe- cially designed for use as driver devices for infrastructure equipment in the 400 MHz to 2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital Optimum Technology applications. Matching® Applied  GaAs HBT Typical OIP3, P1dB, Gain GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT dBm 50 45 40 35 30 25 20 OIP3 P1dB Gain Si CMOS Si BJT GaN HEMT InP HBT RF MEMS 15 10 5 0 850 MHz 1960 MHz 2140 MHz 2450 MHz LDMOS Features  Lower RTH for increased MTTF 108 Hours at TLead=85C  On-Chip Active Bias Control, Single 5V Supply  Excellent Linearity:+43dBm Typ. OIP3 at 1960MHz  High P1dB :+25dBm Typ.  High Gain:+18.5dB at 850MHz  Efficient: Consumes Only 575 mW Applications  W-CDMA, PCS, Cellular Systems  Multi-Carrier Applications Parameter Small Signal Gain Output Power at 1dB Compression Output Third Order Intercept Point Noise...