N-Channel MOSFET
Target Specifications Datasheet
RJF0610DSP
60V , 1.5A Silicon N channel Thermal FET Power Switching
R07DS0560EJ0301 Re...
Description
Target Specifications Datasheet
RJF0610DSP
60V , 1.5A Silicon N channel Thermal FET Power Switching
R07DS0560EJ0301 Rev.3.01
Sep 06, 2016
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (5 to 6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Temperature hysteresis type. High density mounting Power supply voltage applies 12 V and 24 V.
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
8765
1234 2
G
1, 3 2, 4 5, 6, 7, 8
Source Gate Drain
Gate Resistor
Current Limitation Circuit
Temperature Self Gate
Sensing
Return Shut-down
Circuit
Circuit Circuit
MOS1
DD 78
4 G
1 S
Gate Resistor
Current Limitation Circuit
Temperature Self Gate
Sensing
Return Shut-down
Circuit
Circuit Circuit
MOS2
DD 56
3 S
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
60
Gate to source voltage
VGSS
16
Gate to source voltage Drain current
VGSS ID Note4
–2.5 1.5
Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
IDR IAP Note 3 EAR Note 3 Pch Note 1
1.5 0.95 77.4
2
Channel dissipat...
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