Silicon N-Channel FET
Target Specifications Datasheet
RJF0604DPD
Silicon N Channel MOS FET Series Power Switching
R07DS0713EJ0100 Rev.1.00
A...
Description
Target Specifications Datasheet
RJF0604DPD
Silicon N Channel MOS FET Series Power Switching
R07DS0713EJ0100 Rev.1.00
Apr 17, 2012
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (4 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Power supply voltage applies 12 V and 24 V. For Industrial applications
Outline
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
4
1 2 3
G
Gate Resistor
Temperature Sensing Circuit
Latch Circuit
Current Limitation Circuit
Gate Shut-down Circuit
D
1. Gate 2. Drain 3. Source 4. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Gate to source voltage Drain current
VGSS ID Note3
Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
IDR IAP Note 2 EAR Note 2 Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg 50
3. It provides by the current limitation lower bound value.
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