RJF0605JPD

Target Specifications Datasheet RJF0605JPD Silicon N Channel MOS FET Series Power Switching R07DS0579EJ0300 Rev.3.00 Apr 13, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features  Logic level operation (4 V Gate drive).  Built-in the over temperature shut-down circuit.  High endurance capability against to the short circuit.  Latch type shut down operation (need 0 voltage recovery).  Built-in the current limitation circuit.  Power supply voltage applies 12 V and 24 V.  AEC-Q101 Compliant Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 1 2 3 G Gate Resistor Temperature Sensing Circuit Latch Circuit Current Limitation Circuit Gate Shut-down Circuit D 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Gate to source voltage Drain current VGSS ID Note3 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note 2 EAR Note 2 Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1. Value at Tc = 25C 2. Tch = 25C, Rg  50  3. It provides by the current limitation lower bound value. Ratings 6...