N-Channel MOSFET
Target Specifications Datasheet
RJF0608JSP
60 V - 5 A - N Channel MOS FET Power Switching
R07DS0872EJ0100 Rev.1.00
Aug...
Description
Target Specifications Datasheet
RJF0608JSP
60 V - 5 A - N Channel MOS FET Power Switching
R07DS0872EJ0100 Rev.1.00
Aug 29, 2012
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (4 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. High density mounting Power supply voltage applies 12 V and 24 V. AEC-Q101 Compliant
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
8765
1234
G
Gate resistor
Temperature Sensing Circuit
Latch Circuit
Gate Shut-down Circuit
Current Limitation Circuit
DDDD
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
60
Gate to source voltage Gate to source voltage Drain current
VGSS VGSS ID Note3
16 –2.5
5
Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
IDR IAP Note 2 EAR Note 2 Pch Note 1
5 2.6 28.9 2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. When using the glass e...
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