N-Channel MOSFET
Target Specifications Datasheet
RJF0614DSP
60V, 1.5A N Channel Thermal FET Power Switching
R07DS1127EJ0100 Rev.1.00
No...
Description
Target Specifications Datasheet
RJF0614DSP
60V, 1.5A N Channel Thermal FET Power Switching
R07DS1127EJ0100 Rev.1.00
Nov 27, 2013
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (5 to 6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Temperature hysteresis type. High density mounting Power supply voltage applies 12 V and 24 V.
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
8765
1234 2
G
1, 3 2, 4 5, 6, 7, 8
Source Gate Drain
Gate Resistor
Current Limitation Circuit
Temperature Self Gate
Sensing
Return Shut-down
Circuit
Circuit Circuit
MOS1
DD 78
4 Current
G
Gate Resistor
Limitation
Circuit
Temperature Self Gate
Sensing
Return Shut-down
Circuit
Circuit Circuit
1 S MOS2
DD 56
3 S
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
60
Gate to source voltage
VGSS
16
Gate to source voltage Drain current
VGSS ID Note4
–2.5 1.5
Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation
IDR IAP Note 3 EAR Note 3 Pch Note 1
Pch Note 2
1.5 0.9 6...
Similar Datasheet