Document
Applications
Clock Driver for Optical Systems VSAT Point-to-Point Radio Test Equipment & Sensors
Product Features
Frequency Range: 11 - 17 GHz Power: 27 dBm P1dB Gain: 27 dB Output TOI: 34 dBm Attenuation Range: 14 dB Bias: Vd = 6 V, Id = 210 mA, Vg = -0.7 V
Typical Package Dimensions: 4.0 x 4.0 x 0.85 mm
TGA2565-SM
11-17 GHz Medium Power Amplifier
QFN 4x4mm 24L
Functional Block Diagram
24 23 22 21 20 19 1 18 2 17 3 16 4 15 5 14 6 13
General Description
The TriQuint TGA2565-SM is a medium power variable gain amplifier to be used as a driver amplifier in linear Ka band applications. The TGA2565-SM operates from 11 to 17 GHz and is designed using TriQuint’s pHEMT production process.
The TGA2565-SM typically provides 27 dBm of power with 27 dB of small signal gain and 34 dBm of output TOI. The attenuation range is typically 14 dB. Internal attenuators and power detector circuitry allow the user to monitor and / or control output power.
The TGA2565-SM is available in a low-cost, surface mount 24 lead 4x4 mm QFN package and is ideally suited for Clock Driver applications, specifically designed for 11.3, 14.5, and 16.5 GHz clock frequencies.
Lead-free and RoHS compliant. Evaluation Boards are available upon request.
Preliminary Data Sheet: Rev A 10/31/13 © 2013 TriQuint
7 8 9 10 11 12
Pin Configuration
Pin #
1 2, 3, 4, 6, 7, 8, 9, 10, 11, 12, 13, 15, 16, 17, 18 5 14 19 20 21 22 23 24, 25
Symbol
Vg
N/C
RF IN RF OUT Vref Vdet Vd Gain_Ctrl Vpos GND
Ordering Information
Part No.
ECCN
Description
TGA2565-SM EAR99 11-17 GHz MPA
Standard T/R size = 500 pieces on a 7” reel.
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TGA2565-SM
11-17 GHz Medium Power Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Drain Voltage,Vd Drain Current, Id Gate Voltage, Vg Gate Current, Ig Gain_Control Voltage, Gain_Ctrl Attenuator Circuit Voltage, Vpos
Detector Circuit Power Supply, Vsupply
Power Dissipation, Pdiss RF Input Power, CW, 50Ω,T = 25ºC Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature
Rating
+6.5 V 450 mA -3 to 0 V -30 to 30 mA -3.6 to 3.6 V -3.6 to 2.3 V 1 V ≤ Vsupply ≤ 4.9 V + 2mA * Rext 2.93 W 18 dBm
200 oC 260 oC
-40 to 150 oC
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied.
Rext is the value of the external resistor used on the detector circuit shown as R1, R2 in the application circuit diagram shown on page 7.
Recommended Operating Conditions
Parameter
Vd Idq (quiescent current) Id_drive (current under RF drive) Vg
Gain_Ctrl
Vpos
Vsupply
Min
Typical
6
210
Max Units
V
mA
350 mA
-0.7 V 0V 2V 6V
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.
Electrical Specifications
T.