TGA2579-FL

TGA2579-FL 25 Watt Ku-Band GaN Power Amplifier Applications  Ku-band communications Product Features  Frequency Range: 13.75 - 15.35 GHz  Saturated Output Power: 44 dBm  Power-added Efficiency: 30%  Small Signal Gain: 32 dB  Bias: Vd = 25 V, Idq = 1A, Vg = -3.4V typical Functional Block Diagram General Description The TriQuint TGA2579-FL is a packaged Ku-band power amplifier fabricated on TriQuint’s productionreleased, 0.25um GaN on SiC process. Operating from 13.75 to 15.35 GHz, the TGA2579-FL typically provides 44 dBm of saturated output power, 30% power-added efficiency and 32dB of small signal gain. The TGA2579-FL features low loss ground-signalground (GSG) RF transitions designed to interface with a coplanar waveguide multilayer board. Ideally suited for Ku-band communications, the TGA2579-FL supports key commercial and defense-related frequency bands. TriQuint’s 0.25um GaN on SiC process offers superior electrical performance through Ku-band while maintaining high reliability. In addition, the use of SiC substrates provides optimum thermal performance necessary for high power operation. Lead-free and RoHS compliant. Pin Configuration Pin # 1 2,6 3,5,10,12 4 7 8 9 11 13 14 Symbol Vd Vg Gnd RF In Vd Vd Vdet RF Out N/C Vd Ordering Information Part No. ECCN TGA2579-FL 3A001.b.2.b Description Ku-band Power Amplifier Preliminary Data Sheet: 1/8/2013 © 2012 TriQuint Semiconductor, Inc. - 1 of 12 - Disclaimer: Subject to change without notice Connectin...