TGA2585

Applications  Commercial and military radar TGA2585 2.7 – 3.7GHz 18W GaN Power Amplifier Product Features  Frequency Range: 2.7 – 3.7GHz  PSAT: 42.8dBm at 28V  PAE: 52%  Small Signal Gain: 33dB  Input Return Loss: >15dB  Output Return Loss: >12dB  Bias: VD = 25-32V (CW or Pulsed), IDQ = 225mA, VG = -2.5V Typical  Pulsed VD: PP = 1ms, DC = 10%  Chip Dimensions: 3.0 x 1.9 x 0.10 mm Functional Block Diagram 2 34 56 1 J1 RF In 7 J2 RF Out General Description TriQuint’s TGA2585 is an S-band MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25). Covering 2.7-3.7GHz, the TGA2585 provides 18W of saturated output power and 33dB of small signal gain while achieving 52% poweradded efficiency. Higher power can be achieved at the expense of PAE by increasing the drain voltage. The TGA2585 is ideal for phase array S-band radars and can support both short pulse and CW conditions. Both RF ports have integrated DC blocking capacitors and are fully matched to 50ohms. Lead-free and RoHS compliant. Pad Configuration Pad No. 1 2 3, 5 4 6 7 Symbol RF In VG1 VG2 VD1 VD2 RF Out Ordering Information Part TGA2585 ECCN Description 3A001.b.2.a 2.7 – 3.7GHz 18W GaN Power Amplifier Preliminary Datasheet: Rev A 05-12-14 © 2014 TriQuint - 1 of 15 - Disclaimer: Subject to change without notice www.triquint.com TGA2585 2.7 – 3.7GHz 18W GaN Power Amplifier Absolute Maximum Ratings Parameter Value Drain Voltage (VD) Gate Voltage Range (VG) Drain...