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TGA2597-SM

TriQuint Semiconductor

GaN Driver Amplifier

Applications • Commercial and Military Radar • Communications • Electronic Warfare (EW) TGA2597-SM 2 - 6 GHz GaN Driver...


TriQuint Semiconductor

TGA2597-SM

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Description
Applications Commercial and Military Radar Communications Electronic Warfare (EW) TGA2597-SM 2 - 6 GHz GaN Driver Amplifier Product Features Frequency Range: 2 - 6 GHz Small Signal Gain: > 24 dB Power: > 32 dBm PAE: > 31 % IM3: < -24 dBc Bias: VD = 25 V, IDQ = 40 mA Package Dimensions: 4.0 x 4.0 x 0.85 mm Functional Block Diagram General Description TriQuint's TGA2597-SM is a packaged driver amplifier fabricated on TriQuint's TQGaN25 0.25um GaN on SiC production process. The TGA2597-SM operates from 2.0 to 6.0GHz and provides 32 dBm of output power with14 dB of large signal gain and 31 % poweradded efficiency. Using GaN MMIC technology and plastic packaging, the TGA2597-SM provides a low cost driver solution that provides the added benefit of operating on the same voltage rail as the corresponding GaN HPA. It can also serve as the output power amplifier in lower power architectures. The TGA2597-SM is offered in a 4x4 mm plastic overmold QFN. It is internally matched to 50 ohms and includes integrated DC blocking caps on both RF ports allowing for simple system integration. Lead-Free & RoHS compliant. Evaluation Boards are available on request. Pad Configuration Pad Number 3 6 13 19 1-2,4-5,7-12,14-18, 20 21 Symbol RF Input VG RF Output VD N/C GND Ordering Information Part ECCN TGA2597-SM EAR99 Description 2 - 6 GHz GaN Driver Amplifier Preliminary Datasheet: Rev - 09-05-14 © 2014 TriQuint - 1 of 16 - Disclaimer: Subject to change without notic...




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