GaN LNA
Applications
Commercial and Military Radar Satellite Communications
TGA2611
2-6 GHz GaN LNA
Product Features
Fre...
Description
Applications
Commercial and Military Radar Satellite Communications
TGA2611
2-6 GHz GaN LNA
Product Features
Frequency Range: 2–6GHz NF: 1.5dB OTOI: 32dBm Small Signal Gain: 25dB Return Loss: >10dB P1dB: 22dBm Bias: VD = 10V, IDQ = 110mA, VG = -2.3V Typical Chip Dimensions: 2.1 x 1.5 x 0.10mm
Functional Block Diagram
General Description
TriQuint’s TGA2611 is a broadband Low Noise Amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25). Covering 2–6GHz, the TGA2611 typically provides 22dBm P1dB, 25dB of small signal gain, 1.5dB of noise figure and 32dBm of OTOI. In addition to the high overall electrical performance, this GaN amplifier also provides a high level of input power robustness. Able to survive up to 2W of input power without performance degradation, TriQuint’s TGA2611 provides flexibility regarding receive chain protection never before seen with GaAs technology.
Pad Configuration
Pad No.
1 2 3 4
Symbol
RF In VD RF Out VG
Fully matched to 50 ohms with integrated DC blocking caps on both I/O ports, the TGA2611 is ideally suited for radar and satellite communications.
Lead-free and RoHS compliant Evaluation Boards are available upon request.
Ordering Information
Part
TGA2611
ECCN Description
EAR99 2 – 6 GHz GaN LNA
Preliminary Datasheet: Rev - 01-29-15 © 2013 TriQuint
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Disclaimer: Subject to change without notice
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Absolute Maximum Ratings
Parameter
Value
Drain Voltage (VD) Gate V...
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