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TGA2611

TriQuint Semiconductor

GaN LNA

Applications  Commercial and Military Radar  Satellite Communications TGA2611 2-6 GHz GaN LNA Product Features  Fre...


TriQuint Semiconductor

TGA2611

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Description
Applications  Commercial and Military Radar  Satellite Communications TGA2611 2-6 GHz GaN LNA Product Features  Frequency Range: 2–6GHz  NF: 1.5dB  OTOI: 32dBm  Small Signal Gain: 25dB  Return Loss: >10dB  P1dB: 22dBm  Bias: VD = 10V, IDQ = 110mA, VG = -2.3V Typical  Chip Dimensions: 2.1 x 1.5 x 0.10mm Functional Block Diagram General Description TriQuint’s TGA2611 is a broadband Low Noise Amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25). Covering 2–6GHz, the TGA2611 typically provides 22dBm P1dB, 25dB of small signal gain, 1.5dB of noise figure and 32dBm of OTOI. In addition to the high overall electrical performance, this GaN amplifier also provides a high level of input power robustness. Able to survive up to 2W of input power without performance degradation, TriQuint’s TGA2611 provides flexibility regarding receive chain protection never before seen with GaAs technology. Pad Configuration Pad No. 1 2 3 4 Symbol RF In VD RF Out VG Fully matched to 50 ohms with integrated DC blocking caps on both I/O ports, the TGA2611 is ideally suited for radar and satellite communications. Lead-free and RoHS compliant Evaluation Boards are available upon request. Ordering Information Part TGA2611 ECCN Description EAR99 2 – 6 GHz GaN LNA Preliminary Datasheet: Rev - 01-29-15 © 2013 TriQuint - 1 of 12 - Disclaimer: Subject to change without notice www.triquint.com Absolute Maximum Ratings Parameter Value Drain Voltage (VD) Gate V...




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