TGA2612

Applications  Commercial and Military Radar  Communications TGA2612 6-12 GHz GaN LNA Product Features  Frequency Range: 6–12GHz  NF: < 1.8dB (1.5dB midband)  P1dB: 20dBm  OTOI: 29dBm  Small Signal Gain: >22dB  Return Loss: >7dB  Bias: VD = 10V, IDQ = 100mA, VG = -2.3V Typical  Chip Dimensions: 2.1 x 1.5 x 0.10mm Performance features are typical across frequency, under recommended bias and at 25°C carrier backside. Functional Block Diagram 2 J1 1 RF In 3 J2 RF Out 4 General Description TriQuint’s TGA2612 is a broadband Low Noise Amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25). Covering 6–12GHz, the TGA2612 typically provides P1dB of 20dBm, greater than 22dB of small signal gain, 1.5dB noise figure (mid-band) and 29dBm OTOI. In addition to the high electrical performance, this GaN amplifier also provides a high level of input power robustness. Able to survive up to 2W of input power without performance degradation, TriQuint’s TGA2612 provides flexibility regarding receive chain protection resulting in lower costs and reduced board space. Pad Configuration Pad No. 1 2 3 4 Symbol RF In VD RF Out VG Fully matched to 50 ohms with integrated DC blocking caps on both I/O ports, the TGA2612 is ideally suited for both military and commercial radar and communications applications. Lead-free and RoHS compliant Evaluation Boards are available upon request. Ordering Information Part TGA2612 ECCN Description EAR99 6 – 12 GHz GaN LNA ...