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TGA2618 Dataheets PDF



Part Number TGA2618
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description GaAs LNA
Datasheet TGA2618 DatasheetTGA2618 Datasheet (PDF)

Applications  Commercial and Military Radar  Satellite Communications TGA2618 16 - 18 GHz GaAs LNA Product Features  Frequency Range: 16 - 18 GHz  NF: 2.3 dB  Small Signal Gain: 28 dB  Return Loss: >9 dB  P1dB: 6 dBm  PSAT = 10 dBm at PIN = -10 dBm  OTOI: 13 dBm (Pout/tone = -2 dBm)  Bias: VD = 3 V, IDQ = 30 mA, VG = -0.6 V  Chip Dimensions: 2.1 x 1.1 x 0.1 mm General Description TriQuint’s TGA2618 is a Ku-band Low Noise Amplifier fabricated on TriQuint’s TQPHT15 0.15 μm GaAs pHEMT .

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Applications  Commercial and Military Radar  Satellite Communications TGA2618 16 - 18 GHz GaAs LNA Product Features  Frequency Range: 16 - 18 GHz  NF: 2.3 dB  Small Signal Gain: 28 dB  Return Loss: >9 dB  P1dB: 6 dBm  PSAT = 10 dBm at PIN = -10 dBm  OTOI: 13 dBm (Pout/tone = -2 dBm)  Bias: VD = 3 V, IDQ = 30 mA, VG = -0.6 V  Chip Dimensions: 2.1 x 1.1 x 0.1 mm General Description TriQuint’s TGA2618 is a Ku-band Low Noise Amplifier fabricated on TriQuint’s TQPHT15 0.15 μm GaAs pHEMT process. The TGA2618 operates from 16 to 18 GHz and typically provides 6 dBm P1dB, 28 dB of small signal gain and 13 dBm OTOI with 2.3 dB NF. The TGA2618 is ideally suited to support both radar and satellite communications as either an LNA or a general purpose gain block. Both RF ports have intergraded DC blocking caps and are fully matched to 50 ohms allowing for simple system integration. Lead-free and RoHS compliant Evaluation Boards are available upon request. Functional Block Diagram 23 14 Pad Configuration Pad No. 1 2 3 4 Symbol RFIN VG VD RFOUT Ordering Information Part TGA2618 ECCN Description EAR99 16 - 18 GHz GaN LNA Preliminary Datasheet: Rev - 09-09-14 © 2014 TriQuint - 1 of 11 - Disclaimer: Subject to change without notice www.triquint.com Absolute Maximum Ratings Parameter Value Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation, 85 °C (PDISS) Input Power, CW, 50 Ω, (PIN) Channel temperature (TCH) 6V -2 to 0 V 70 mA -0.5 to 6 mA 0.3 W 0 dBm 200 °C Mounting Temperature (30 Seconds) 320 °C Storage Temperature -55 to 150 °C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. TGA2618 16 - 18 GHz GaAs LNA Recommended Operating Conditions Parameter Value Drain Voltage (VD) 3V Drain Current (IDQ) 30 mA Gate Voltage (VG) -0.6 V Typical Temperature (TBASE) -40 to 85 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed overall operating conditions. Electrical Specifications Test conditions unless otherwise noted: 25 0C, VD = 3 V, IDQ = 30 mA, VG = -0.6 V, CW Parameter Min Typical Operational Frequency Range 16 Small Signal Gain 28 Noise Figure 2.3 Input Return Loss >9 Output Return Loss >10 Output Power at 1 dB Gain Compression 6 Output TOI at Pout/tone = -2 dBm 13 Gain Temperature Coefficient -0.03 Noise Figure Temperature Coefficient 0.007 Max 18 Units GHz dB dB dB dB dBm dBm dB/°C dB/°C Preliminary Datasheet: Rev - 09-09-14 © 2014 TriQuint - 2 of 11 - Disclaimer: Subject to change without notice www.triquint.com TGA2618 16 - 18 GHz GaAs LNA Thermal and Reliability Information Parameter Thermal Resistance (θJC) (1) Channel Temperature (TCH) (Without RF) Median Lifetime (TM) Test Conditions Tbase = 85 °C, VD = 3 V (CW) IDQ = 30 mA, PDISS = 0.0.


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