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HBT138F-600

SHANTOU HUASHAN

INSULATED TYPE TRIAC

Shantou Huashan Electronic Devices Co.,Ltd. HT138F-600 INSULATED TYPE TRIAC (TO-220F PACKAGE) █ Features * Repetitiv...


SHANTOU HUASHAN

HBT138F-600

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Description
Shantou Huashan Electronic Devices Co.,Ltd. HT138F-600 INSULATED TYPE TRIAC (TO-220F PACKAGE) █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=12A) * High Commutation dv/dt *Isolation Voltage(VISO=1500V AC) █ General Description TO-220F This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. █ Absolute Maximum Ratings(Ta=25℃) 12 3 Tstg——Storage Temperature………………………………………………………………… -40~150℃ Tj ——Operating Junction Temperature …………………………………………………… -40~125℃ PGM——Peak Gate Power Dissipation………………………………………………………………… 5W VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V IT(RMS)——R.M.S On-State Current(Tc=58℃)………………………………………………… 12A VGM——Peak Gate Voltage…………………………………………………………………………… 10V IGM——Peak Gate Current…………………………………………………………………………… 2.0A ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) ……………… 100/110A VISO——Isolation Breakdown Voltage(R.M.S,A.C.1minute)………………………………………1500V █ Electrical Characteristics(Ta=25℃) Symbol Items Min Max Unit Conditions IDRM Repetitive Peak Off-State Current 2.0 mA VD=VDRM,Single Phase,Half Wave, TJ=125℃ VTM Peak On-State Voltage 1.65 V IT=15A, Inst. Measurement I+GT1 Gate Trigger Current(Ⅰ) 25 mA VD=6V, RL=10 ohm I-GT1 Gate Trigger Current(Ⅱ) 25 mA VD=6V, RL=10 ohm I-GT3 Gate Trigger Current(Ⅲ) 25 mA VD=6V, R...




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