HBT139DE

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200308 Issued Date : 2003.11.01 Revised Date : 2003.11.28 Page No. : 1/4 HBT139XE Three Quadrant Triac Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. Quick Reference Data Part No. HBT139DE VDRM(V) 600 IT(RMS)(A) 16 ITSM (A) 140 TO-220AB Quadrant I - II - III Pin Configuration Pin Description 1 Main terminal 1 2 Main terminal 2 3 Gate tab Main terminal 2 tab 123 Symbol T2 T1 G Limtiing Values Symbol VDRM IT(RMS) ITSM I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Parameter Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering T2+ G+ T2+ GT2- GT2- G+ Peak gate current Peak gate voltage Peak gate power Average gate power Storage Temperature Range Operating junction temperature Min. Max. Units - 600 V - 16 A - 140 A - 98 A2S - 50 A/us - 50 A/us - 50 A/us - - A/us - 2A - 10 V - 5W - 0.5 W - 150 °C -40 125 °C HBT139XE HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Static Characteristics (Ta=25°C) Symbol Parameter Conditions IGT Gate Trigger Current IL Latching Current IH Holding Current VT On-state Voltage VGT Gate Trigger Voltage ID Off-state Leakage Current VD=6V, RL=10Ω, T2+ G+ VD=6V, RL=10Ω, T2+ GVD=6V, RL=10Ω, T2-...