HBT169M

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200105 Issued Date : 2001.10.01 Revised Date : 2001.11.20 Page No. : 1/4 HBT169M THYRISTORS Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Quick Reference Data Symbol VDRM, VRRM IT(AV) IT(RMS) ITSM Parameter Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current Pin Configuration Pin Description 1 Gate 2 Anode 3 Cathode 123 SOT-89 Max. 400 0.5 0.8 8 Unit V A A A Symbol A K G Limtiing Values Symbol VDRM, VRRM IT(AV) IT(RMS) ITSM I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj Parameter Repetitive peak off-state voltages Average on-state current (half sine wave; Tlead≤83°C) RMS on-state current (all conduction angles) Non-repetitive peak on-state current (t=10ms) Non-repetitive peak on-state current (t=8.3ms) I2t for fusing (t=10ms) Repetitive rate of rise of on-state current after triggering (ITM=2A; IG=10mA; dIG/dt=100mA/us) Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power (over any 20ms period) Storage temperature Operating junction temperature Min. Max. Units - 400 V - 0.5 A - 0.8 A - 8A - 9A - 0.32 A2S - 50 A/us - 1A - 5V 5V - 2W - 0.1 W - 150 °C - 125 °C...