TGA2625

Applications  Radar  Communications TGA2625 10 – 11GHz 20W GaN Power Amplifier Product Features  Frequency Range: 10 – 11GHz  PSAT: 43dBm @ PIN = 15dBm  P1dB: >40dBm  PAE: >42% @ PIN = 15dBm  Large Signal Gain: 28dB  Small Signal Gain: 37dB  Return Loss: >11dB  Bias: VD = 28V, IDQ = 365mA, VG = -2.5V Typical  Pulsed VD: PW = 100us and DC = 10%  Chip Dimensions: 5.0 x 2.62 x 0.10 mm Functional Block Diagram 2 3 45 16 10 9 8 7 General Description TriQuint’s TGA2625 is an x-band, high power MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The TGA2625 operates from 10– 11GHz and provides a superior combination of power, gain and efficiency. Achieving 20W of saturated output power with 28dB of large signal gain and greater than 42% power-added efficiency, the TGA2625 provides the level of performance demanded by today’s system architectures. Depending on the system requirements, the TGA2625 can support cost saving initiatives on existing systems while supporting next generation systems with increased performance. Lead-free and RoHS compliant. Evaluation boards are available upon request. Pad Configuration Pad No. 1 2, 10 4, 8 3, 9 5, 7 6 Symbol RF In VG1-2 VG3 VD1-2 VD3 RF Out Ordering Information Part TGA2625 ECCN Description 3A001.b.2.b 10 – 11GHz 20W GaN Power Amplifier Preliminary Datasheet: Rev - 11-03-14 © 2014 TriQuint - 1 of 14 - Disclaimer: Subject to change without notice www.triquint.com TGA2625 10 – 11GHz 20W GaN...