Document
Applications
• Commercial and Military Radar • Communications • Electronic Warfare (EW)
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Product Features
• Frequency Range: 6 - 12 GHz • Push-Pull Configuration • Low Harmonic Content; ≤ -40 dBc at Psat • Small Signal Gain: > 27 dB • Power: > 32 dBm • PAE: > 15 % • IM3: < -20 dBc • Input Return Loss > 15 dB • Output Return Loss > 10 dB • Bias: VD = 25 V, IDQ = 200 mA • Package Dimensions: 5.0 x 5.0 x 1.42 mm
General Description
TriQuint's TGA2627-SM is a push-pull driver amplifier fabricated on TriQuint's TQGaN25 0.25um GaN on SiC production process. The TGA2627-SM operates from 6 to 12 GHz and provides 32 dBm of output power with 18 dB of large signal gain and greater than 20 % poweradded efficiency. The push-pull topology yields > 40dB of harmonic suppression at Psat.
Using GaN MMIC technology and air-cavity ceramic QFN packaging, the TGA2627-SM provides a low cost driver solution that provides the added benefit of operating on the same voltage rail as the corresponding GaN HPA. It can also serve as the output power amplifier on lower power architectures.
The TGA2627-SM is offered in a 5x5 mm air-cavity QFN with an aluminum nitride base and LCP lid. It is wellmatched to 50 ohms and includes integrated DC blocking caps on both RF ports allowing for simple system integration.
Lead-Free & RoHS compliant.
Evaluation Boards are available on request.
Functional Block Diagram
Pad Configuration
Pad Number
1-4, 6-9,11, 13, 15-19, 21-26, 28, 30, 32
5 10, 31 12, 29 14, 27 20
Symbol
GND
RF Input VG12 VD VG3 RF Output
Ordering Information
Part ECCN
TGA2627-SM
EAR99
Description
6 -12 GHz GaN Driver Amplifier
Preliminary Datasheet: Rev - 09-05-14 © 2014 TriQuint
- 1 of 16 -
Disclaimer: Subject to change without notice
www.triquint.com
Absolute Maximum Ratings
Parameter
Drain Voltage (VD) Gate Voltage Limits (VG) Drain Current (ID) Gate Current (IG @TCH = 200 °C) Power Dissipation, 85 °C (Pdiss) Input Power, CW, 50 Ω 1 Input Power, CW, VSWR 10:1 1 Channel Temperature (TCH) Notes: 1. VD = 25V, IDQ = 40mA, TB = 85 °C
Value
40 V -8 V / 0 V 550 mA -1.4 / 11.2 mA 12.3 W 30 dBm 27 dBm
275 °C
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Recommended Operating Conditions
Parameter
Drain Voltage (VD) Gate Voltage (VG), typical Quiescent Drain Current (IDQ) Operating Drain Current (ID_DRIVE)
Value
25 V -2.33 V 200 mA 430 mA
Electrical Specifications
Test conditions, unless otherwise noted: T = 25 °C, VD = 25V, IDQ = 200 mA, part mounted to EVB (page 11)
Parameter
Min Typical Max
Operating Frequency Range
6 12
Output Power (@ Pin = 13 dBm)
> 32
Power Added Efficiency (@ Pin = 13 dBm)
> 15
Small Signal Gain
> 27
Input Return Loss
> 16
Output Return Loss
> 10
IM3 (POUT/tone < 26 dBm) 2nd Harmonic Suppression
< -20 ≤ -40
3rd Harmonic Suppression
≤ -40
Output Power Temperature Coefficient
-0.012
Units
GHz dBm
% dB dB dB dBc dBc dBc dB/°C
Preliminary Datasheet: Rev - 09-05-14 © 2014 TriQuint
- 2 of 16 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Specifications
Thermal and Reliability Information
Parameter
Conditions
Value
Units
Thermal Resistance (θJC) (1) Channel Temperature (TCH) (1) Median Lifetime (TM)
TPKG = 85°C, VD = 25 V, IDQ = 200 mA, ID_DRIVE = 390 mA, PIN = 15 dBm, POUT = 31 dBm, PDISS = 8.5 W
10.6 175 1.3E08
ºC/W °C Hrs
Note:
1. Die mounted to 12mil aluminum nitride base using conductive epoxy; package backside temperature fixed at 85 °C.
Median Lifetime
Test Conditions: 40 V; Failure Criterion = 10% reduction in ID MAX
Median Lifetime, TM (Hours)
Median Lifetime vs. Channel Temperature
1E+18 1E+17 1E+16 1E+15 1E+14 1E+13 1E+12 1E+11 1E+10 1E+09 1E+08 1E+07 1E+06 1E+05
FET13
1E+04 25 50 75 100 125 150 175 200 225 250 275
Channel Temperature, TCH (°C)
Preliminary Datasheet: Rev - 09-05-14 © 2014 TriQuint
- 3 of 16 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Typical Performance
Test conditions, unless otherwise noted: T = 25 °C, part mounted to EVB (page 11)
S21 (dB) S11 (dB)
Gain vs. Freq. vs. Temp.
45 40 VD = 25 V, IDQ = 200 mA
35
30
25
20
15
10 - 40 C 5 +25 C +85 C 0 4 5 6 7 8 9 10 11 12 13 14 Frequency (GHz)
Input Return Loss vs. Freq. vs. Temp.
0 VD = 25 V, IDQ = 200 mA
-5
-10
-15
-20
-25
-30 4
- 40 C +25 C +85 C
56
7 8 9 10 11 12 13 14 Frequency (GHz)
S22 (dB)
Output Return Loss vs. Freq. vs. Temp.
0 VD = 25 V, IDQ = 200 mA
-5
-10
-15
-20 - 40 C
-25 +25 C +85 C
-30 4 5 6 7 8 9 10 11 12 13 14 Frequency (GHz)
S21 (dB) S11 (dB)
34 32 30 28 26 24 22 20
4
Gain vs. Frequency vs. IDQ
VD = 25 V, Temp. = 25 °C
100 mA 150 mA 200 mA 5 6 7 8 9 10 11 12 13 14 Frequency (GHz)
0 Input Return Loss vs. Frequency vs. IDQ
VD = 25 V, Temp. = 25 °C -5
-10
-15
-20
-25
-30 4
100 mA 150 mA 200 mA
56
7 8 9 10 11 12 13 14 Frequency (GHz)
Preliminary Datasheet: Rev - 09-05-14 © 2014 TriQuint
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