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TGA2627-SM Dataheets PDF



Part Number TGA2627-SM
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description GaN Driver Amplifier
Datasheet TGA2627-SM DatasheetTGA2627-SM Datasheet (PDF)

Applications • Commercial and Military Radar • Communications • Electronic Warfare (EW) TGA2627-SM 6 - 12 GHz GaN Driver Amplifier Product Features • Frequency Range: 6 - 12 GHz • Push-Pull Configuration • Low Harmonic Content; ≤ -40 dBc at Psat • Small Signal Gain: > 27 dB • Power: > 32 dBm • PAE: > 15 % • IM3: < -20 dBc • Input Return Loss > 15 dB • Output Return Loss > 10 dB • Bias: VD = 25 V, IDQ = 200 mA • Package Dimensions: 5.0 x 5.0 x 1.42 mm General Description TriQuint's TGA2627-SM i.

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Applications • Commercial and Military Radar • Communications • Electronic Warfare (EW) TGA2627-SM 6 - 12 GHz GaN Driver Amplifier Product Features • Frequency Range: 6 - 12 GHz • Push-Pull Configuration • Low Harmonic Content; ≤ -40 dBc at Psat • Small Signal Gain: > 27 dB • Power: > 32 dBm • PAE: > 15 % • IM3: < -20 dBc • Input Return Loss > 15 dB • Output Return Loss > 10 dB • Bias: VD = 25 V, IDQ = 200 mA • Package Dimensions: 5.0 x 5.0 x 1.42 mm General Description TriQuint's TGA2627-SM is a push-pull driver amplifier fabricated on TriQuint's TQGaN25 0.25um GaN on SiC production process. The TGA2627-SM operates from 6 to 12 GHz and provides 32 dBm of output power with 18 dB of large signal gain and greater than 20 % poweradded efficiency. The push-pull topology yields > 40dB of harmonic suppression at Psat. Using GaN MMIC technology and air-cavity ceramic QFN packaging, the TGA2627-SM provides a low cost driver solution that provides the added benefit of operating on the same voltage rail as the corresponding GaN HPA. It can also serve as the output power amplifier on lower power architectures. The TGA2627-SM is offered in a 5x5 mm air-cavity QFN with an aluminum nitride base and LCP lid. It is wellmatched to 50 ohms and includes integrated DC blocking caps on both RF ports allowing for simple system integration. Lead-Free & RoHS compliant. Evaluation Boards are available on request. Functional Block Diagram Pad Configuration Pad Number 1-4, 6-9,11, 13, 15-19, 21-26, 28, 30, 32 5 10, 31 12, 29 14, 27 20 Symbol GND RF Input VG12 VD VG3 RF Output Ordering Information Part ECCN TGA2627-SM EAR99 Description 6 -12 GHz GaN Driver Amplifier Preliminary Datasheet: Rev - 09-05-14 © 2014 TriQuint - 1 of 16 - Disclaimer: Subject to change without notice www.triquint.com Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Limits (VG) Drain Current (ID) Gate Current (IG @TCH = 200 °C) Power Dissipation, 85 °C (Pdiss) Input Power, CW, 50 Ω 1 Input Power, CW, VSWR 10:1 1 Channel Temperature (TCH) Notes: 1. VD = 25V, IDQ = 40mA, TB = 85 °C Value 40 V -8 V / 0 V 550 mA -1.4 / 11.2 mA 12.3 W 30 dBm 27 dBm 275 °C TGA2627-SM 6 - 12 GHz GaN Driver Amplifier Recommended Operating Conditions Parameter Drain Voltage (VD) Gate Voltage (VG), typical Quiescent Drain Current (IDQ) Operating Drain Current (ID_DRIVE) Value 25 V -2.33 V 200 mA 430 mA Electrical Specifications Test conditions, unless otherwise noted: T = 25 °C, VD = 25V, IDQ = 200 mA, part mounted to EVB (page 11) Parameter Min Typical Max Operating Frequency Range 6 12 Output Power (@ Pin = 13 dBm) > 32 Power Added Efficiency (@ Pin = 13 dBm) > 15 Small Signal Gain > 27 Input Return Loss > 16 Output Return Loss > 10 IM3 (POUT/tone < 26 dBm) 2nd Harmonic Suppression < -20 ≤ -40 3rd Harmonic Suppression ≤ -40 Output Power Temperature Coefficient -0.012 Units GHz dBm % dB dB dB dBc dBc dBc dB/°C Preliminary Datasheet: Rev - 09-05-14 © 2014 TriQuint - 2 of 16 - Disclaimer: Subject to change without notice www.triquint.com TGA2627-SM 6 - 12 GHz GaN Driver Amplifier Specifications Thermal and Reliability Information Parameter Conditions Value Units Thermal Resistance (θJC) (1) Channel Temperature (TCH) (1) Median Lifetime (TM) TPKG = 85°C, VD = 25 V, IDQ = 200 mA, ID_DRIVE = 390 mA, PIN = 15 dBm, POUT = 31 dBm, PDISS = 8.5 W 10.6 175 1.3E08 ºC/W °C Hrs Note: 1. Die mounted to 12mil aluminum nitride base using conductive epoxy; package backside temperature fixed at 85 °C. Median Lifetime Test Conditions: 40 V; Failure Criterion = 10% reduction in ID MAX Median Lifetime, TM (Hours) Median Lifetime vs. Channel Temperature 1E+18 1E+17 1E+16 1E+15 1E+14 1E+13 1E+12 1E+11 1E+10 1E+09 1E+08 1E+07 1E+06 1E+05 FET13 1E+04 25 50 75 100 125 150 175 200 225 250 275 Channel Temperature, TCH (°C) Preliminary Datasheet: Rev - 09-05-14 © 2014 TriQuint - 3 of 16 - Disclaimer: Subject to change without notice www.triquint.com TGA2627-SM 6 - 12 GHz GaN Driver Amplifier Typical Performance Test conditions, unless otherwise noted: T = 25 °C, part mounted to EVB (page 11) S21 (dB) S11 (dB) Gain vs. Freq. vs. Temp. 45 40 VD = 25 V, IDQ = 200 mA 35 30 25 20 15 10 - 40 C 5 +25 C +85 C 0 4 5 6 7 8 9 10 11 12 13 14 Frequency (GHz) Input Return Loss vs. Freq. vs. Temp. 0 VD = 25 V, IDQ = 200 mA -5 -10 -15 -20 -25 -30 4 - 40 C +25 C +85 C 56 7 8 9 10 11 12 13 14 Frequency (GHz) S22 (dB) Output Return Loss vs. Freq. vs. Temp. 0 VD = 25 V, IDQ = 200 mA -5 -10 -15 -20 - 40 C -25 +25 C +85 C -30 4 5 6 7 8 9 10 11 12 13 14 Frequency (GHz) S21 (dB) S11 (dB) 34 32 30 28 26 24 22 20 4 Gain vs. Frequency vs. IDQ VD = 25 V, Temp. = 25 °C 100 mA 150 mA 200 mA 5 6 7 8 9 10 11 12 13 14 Frequency (GHz) 0 Input Return Loss vs. Frequency vs. IDQ VD = 25 V, Temp. = 25 °C -5 -10 -15 -20 -25 -30 4 100 mA 150 mA 200 mA 56 7 8 9 10 11 12 13 14 Frequency (GHz) Preliminary Datasheet: Rev - 09-05-14 © 2014 TriQuint - 4 of .


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