TGA2814-CP

Applications  Radar TGA2814-CP 3.1 to 3.6 GHz, 80W GaN Power Amplifier Product Features  Frequency Range: 3.1 – 3.6 GHz  Pout: 49 dBm at PIN = 27 dBm  PAE: 50 % Pulsed  Power Gain: 23 dB at PIN = 27 dBm  Bias: VD = 30 V, IDQ = 200 mA, VG = -3 V typical, pulsed (PW = 15 ms, DC = 30 %)  Package Dimensions: 15.2 x 15.2 x 3.5 mm  Package base is pure Cu offering superior thermal management Functional Block Diagram 1 2 3 4 5 10 9 8 7 6 General Description TriQuint’s TGA2814-CP is a packaged high-power S-Band amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process. Operating from 3.1 to 3.6 GHz, the TGA2814-CP achieves 80 W saturated output power, a power-added efficiency of 50 %, and power gain of 23 dB. The TGA2814-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both short and long pulse conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. The TGA2814-CP is ideally suited for both commercial and defense applications. Lead free and RoHS compliant. Evaluation Boards are available upon request. Pin Configuration Pad No. 1, 5 2, 4, 7, 9 3 6, 10 8 Symbol VG GND RFIN VD RFOUT Ordering Information Part TGA2814-CP ECCN Description 3A001.b.2.a 3.1 – 3.6 GHz, 80 W GaN Power Amplifier Preliminary Datasheet: 09-18-14 © 2014 TriQuint - 1 of 12 - Disclaimer: Subject to change wit...