Power MOSFET
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 4.6 7.3 8.2
60
V m nC A
...
Description
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 4.6 7.3 8.2
60
V m nC A
Applications
Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters
FastIRFET™ IRFH4234PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features Low Charge (typical 8.2 nC) Low RDSon (<4.6 m) Low Thermal Resistance to PCB (<4.6 °C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification
Benefits Low Switching Losses Lower Conduction Losses Enable better Thermal Dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number
Package Type
IRFH4234PbF
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRFH4234TRPbF
Absolute Maximum Ratings
VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C
TJ TSTG
Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Max. ± 20 22 60 38 240 3.5 27 0.028 -55 to + 150
Units V
A
W W/°C
°C
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