IRFH7085PBF

Application  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  DC/DC converters  DC/AC Inverters   Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant  StrongIRFET™ IRFH7085PbF HEXFET® Power MOSFET VDSS RDS(on) typ. max ID (Silicon Limited) ID (Package Limited) 60V 2.6m 3.2m 147A 100A    PQFN 5X6 mm Base part number Package Type    IRFH7085PbF PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH7085TRPbF RDS(on), Drain-to -Source On Resistance (m ) ID, Drain Current (A) 8.0 ID = 75A 7.0 6.0 5.0 TJ = 125°C 4.0 3.0 TJ = 25°C 2.0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 150 125 100 75 50 25 0 25 Limited By Package 50 75 100 125 TC , Case Temperature (°C) 150 Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 17, 2015   IRFH7085PbF Absolute Maximum Rating Symbol Parameter ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM PD @ TC = 25°C Pulsed...