Voltage reference diodes
DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D050
1N821 to 1N829 1N821A to 1N829A Voltage reference diodes
Product s...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D050
1N821 to 1N829 1N821A to 1N829A Voltage reference diodes
Product specification Supersedes data of March 1991 1996 Mar 20
Philips Semiconductors
Product specification
Voltage reference diodes
FEATURES Temperature compensated Reference voltage range: 5.89 to 6.51 V (typ. 6.20 V) Low temperature coefficient range: max. 0.0005 to 0.01 %/K.
k handbook, halfpage
1N821 to 1N829 1N821A to 1N829A
DESCRIPTION Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package.
a
MAM216
APPLICATION Voltage reference sources in measuring instruments such as digital voltmeters.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ Ptot Tstg Tj Tamb PARAMETER working current total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 50 °C CONDITIONS MIN. − − −65 − −55 MAX. 50 400 +200 200 +100 UNIT mA mW °C °C °C
1996 Mar 20
2
Philips Semiconductors
Product specification
Voltage reference diodes
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Vref ∆Vref PARAMETER reference voltage reference voltage excursion 1N821; 1N821A 1N823; 1N823A 1N825; 1N825A 1N827; 1N827A 1N829; 1N829A SZ temperature coefficient 1N821; 1N821A 1N823; 1N823A 1N825; 1N825A 1N827; 1N827A 1N829; 1N829A rdif differential resistance 1N821 to 1N829 1N821A to 1N829A Notes IZ = 7.5 mA; se...
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