Power MOSFET
FastIRFET™ IRFH7190PbF
VDSS RDS(on) max (@ VGS = 10V)
Qg (typical) Rg (typical)
ID (@TC (Bottom) = 25°C)
100 7.5 26 1....
Description
FastIRFET™ IRFH7190PbF
VDSS RDS(on) max (@ VGS = 10V)
Qg (typical) Rg (typical)
ID (@TC (Bottom) = 25°C)
100 7.5 26 1.0
82
V m nC
A
HEXFET® Power MOSFET PQFN 5X6 mm
Applications
Optimized for Secondary Side Synchronous Rectification Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Hot Swap and Active O-Ring BLDC Motor Drive
Features Low RDS(ON) (< 7.5m) Internal Snubber Low Thermal Resistance to PCB (<1.2°C/W) 100% Rg Tested Low Profile (<1.05 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1
Benefits Lower Conduction Losses Reduced Vds Spike, Improved EMI Increased Power Density Increased Reliability results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number IRFH7190PbF
Package Type PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRFH7190TRPbF
Absolute Maximum Ratings
Parameter
VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor
TJ TSTG
Operating Junction and Storage Temperature Range
Max. ± 20
15 82 52 245 3.6 104 0.03 -55 to + 150
Units V
A
W
W/°...
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