SILICON EPITAXIAL PLANAR DIODE
SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES Small Package. Small Total Capacitance : CT=1....
Description
SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.5 (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Forward Current Junction Temperature
VR IF Tj
Storage Temperature Range
Tstg
RATING 35 100 150
-55 150
UNIT V mA
KDS114E
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK B A
GG
C 1
2 D
1. ANODE 2. CATHODE
E
F
DIM A B C D E F G
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10
ESC
Marking
Type Name
UD
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage Reverse Current Reverse Voltage Total Capacitance
VF IR VR CT
Series Resistance
rs
TEST CONDITION IF=2mA VR=15V IR=1 A VR=6V, f=1MHz IF=2mA, f=100MHz
MIN. 35 -
TYP. 0.7 0.5
MAX. 0.85 0.1
1.2 0.9
UNIT V A V pF
2014. 3. 31
Revision No : 2
1/2
SERIES RESISTANCE rS (Ω)
KDS114E
rS - IF
3 Ta=25 C f=100MHz
1
0.5 0.3
0.1 1
3 10 30 FORWARD CURRENT IF (mA)
100
TOTAL CAPACITANCE CT (pF)
CT - VR
10 Ta=25 C f=100MHz
5
3
1
0.5 0.3
1
3 5 10
30 50 100
REVERSE VOLTAGE VR (V)
I F - VF
10 -1 Ta=25 C
10 -2
10 -3
10 -4 0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 FORWARD VOLTAGE V F (V)
FORWARD CURRENT I F (A)
2014. 3. 31
Revision No : 2
2/2
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