KDS114V

SEMICONDUCTOR TECHNICAL DATA KDS114V SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.5 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 35 100 150 -55 150 UNIT V mA CATHODE MARK 21 B DIM MILLIMETERS A A 1.4Ź0.05 B 1.0Ź0.05 C 0.6Ź0.05 D 0.28Ź0.03 E 0.5Ź0.05 F 0.12Ź0.03 1. ANODE 2. CATHODE CE DF VSC Marking Type Name P1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Reverse Voltage Total Capacitance VF IR VR CT Series Resistance rs TEST CONDITION IF=2mA VR=15V IR=1 A VR=6V, f=1MHz IF=2mA, f=100MHz MIN. 35 - TYP. 0.7 0.5 MAX. 0.85 0.1 1.2 0.9 UNIT V A V pF 2005. 3. 28 Revision No : 0 1/2 SERIES RESISTANCE rS (Ω) KDS114V r S - IF 3 Ta=25 C f=100MHz 1 0.5 0.3 0.1 1 3 10 30 FORWARD CURRENT IF (mA) 100 TOTAL CAPACITANCE CT (pF) C T - VR 10 Ta=25 C f=100MHz 5 3 1 0.5 0.3 1 3 5 10 30 50 100 REVERSE VOLTAGE VR (V) IF - VF 10 -1 Ta=25 C 10 -2 10 -3 10 -4 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 FORWARD VOLTAGE V F (V) FORWARD CURRENT I F (A) 2005. 3. 28 Revision No : 0 2/2 ...