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MBRD1080 Dataheets PDF



Part Number MBRD1080
Manufacturers WON-TOP
Logo WON-TOP
Description 10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Datasheet MBRD1080 DatasheetMBRD1080 Datasheet (PDF)

® WON-TOP ELECTRONICS MBRD1020/S – MBRD10100/S 10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Surge Current Capability  Low Power Loss, High Efficiency  Ideally Suited for Automatic Assembly  For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Mechanical Data  Case: DPAK/TO-252, Molded Plastic  Terminals: Plated Leads Solderable per MIL-STD-202,.

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® WON-TOP ELECTRONICS MBRD1020/S – MBRD10100/S 10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Surge Current Capability  Low Power Loss, High Efficiency  Ideally Suited for Automatic Assembly  For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Mechanical Data  Case: DPAK/TO-252, Molded Plastic  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: See Diagram  Weight: 0.3 grams (approx.)  Mounting Position: Any  Marking: Device Code, See Page 3  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 A B D C J E PIN 1 2 3 G H PP PIN 1 PIN 3 Case, PIN 2 (MBRD1020 Series) PIN 3 Case, PIN 2 (MBRD1020S Series) K L DPAK/TO-252 Dim Min Max A 6.05 6.65 B 5.05 5.55 C 2.25 2.40 D 1.05 1.25 E 5.48 6.08 G 2.55 3.00 H 0.55 0.90 J 0.49 0.55 K 0.95 1.25 L 0.49 0.55 P 2.30 Typical All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VRWM VR MBRD MBRD MBRD MBRD MBRD MBRD MBRD MBRD Unit 1020/S 1030/S 1040/S 1045/S 1050/S 1060/S 1080/S 10100/S 20 30 40 45 50 60 80 100 V RMS Reverse Voltage VR(RMS) 14 21 28 32 35 42 56 70 V Average Rectified Output Current @TC = 125°C Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) IO IFSM 10 A 100 A Forward Voltage @IF = 10A VFM 0.55 0.75 0.85 V Peak Reverse Current At Rated DC Blocking Voltage @TJ = 25°C @TJ = 100°C IRM 0.2 15 mA Typical Junction Capacitance (Note 1) CJ 450 350 pF Thermal Resistance, Junction to Ambient (Note 2) Thermal Resistance, Junction to Case (Note 2) R JA R JC 70 2.5 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 2. Mounted on FR-4 PC board with minimum recommended pad layout. © Won-Top Electronics Co., Ltd. Revision: September, 2012 www.wontop.com 1 MBRD1020/S – MBRD10100/S ® IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD RECTIFIED CURRENT (A) WON-TOP ELECTRONICS 10 100 Pulse Width = 300µs 1% Duty Cycle TJ = 25°C 8 1050/S – 1060/S 10 6 1020/S – 1045/S 4 2 Resistive or Inductive Load 0 0 15 30 45 60 75 90 105 120 135 150 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 100 Single Half-Sine-Wave JEDEC Method 80 60 40 20 1080/S – 10100/S 1.0 0.1 0 0.2 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 100 10 1.0 0.1 0.01 TJ = 100°C TJ = 75°C TJ = 25°C IR, INSTANTANEOUS REVERSE CURRENT (mA) IFSM, PEAK FORWARD SURGE CURRENT (A) PD, POWER DISSIPATION (W) 0 1 10 .


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