Document
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
Switch-mode Schottky Power Rectifier
Surface Mount Power Package
This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.
Features
• Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 94 V−0 @ 0.125 in • Short Heat Sink Tab Manufactured − Not Sheared! • SBRB and SBRD8 Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 1.7 grams for D2PAK (approximately)
0.4 grams for DPAK (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL1 Requirements • ESD Ratings:
♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V)
www.onsemi.com
SCHOTTKY BARRIER RECTIFIER
10 AMPERES, 45 VOLTS
1
4 3
MARKING DIAGRAM
4
1 3 D2PAK CASE 418B
AY WW
MBRB1045G AKA
A = Assembly Location
Y = Year
WW = Work Week
MBRB1045 = Device Code
G = Pb−Free Package
AKA
= Diode Polarity
4 MARKING DIAGRAM
12 3
DPAK CASE 369C
AYWW B10 45G
A Y WW B1045 G
= Assembly Location = Year = Work Week = Device Code = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
July, 2019 − Rev. 10
1
Publication Order Number: MBRB1045/D
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current (Rated VR) TC = 135°C Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 135°C Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM VRWM
VR IF(AV) IFRM
IFSM
45
10 20 150 (MBRB/SBRB) 70 (MBRD/SBRD)
V
A A A
Operating Junction and Storage Temperature Range (Note 1)
TJ, Tstg
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, (MBRB1045G) J.