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2SJ552L Dataheets PDF



Part Number 2SJ552L
Manufacturers Renesas
Logo Renesas
Description P-Channel MOSFET
Datasheet 2SJ552L Datasheet2SJ552L Datasheet (PDF)

2SJ552(L), 2SJ552(S) Silicon P Channel MOS FET Description High speed power switching REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 D 1 23 123 G S 1. Gate 2. Drain 3. Source 4. Drain Rev.4.00 Sep 07, 2005 page.

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2SJ552(L), 2SJ552(S) Silicon P Channel MOS FET Description High speed power switching REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 D 1 23 123 G S 1. Gate 2. Drain 3. Source 4. Drain Rev.4.00 Sep 07, 2005 page 1 of 8 2SJ552(L), 2SJ552(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value –60 ±20 –20 –80 –20 –20 34 75 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS V (BR) GSS IDSS IGSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min –60 ±20 — — –1.0 — — 10 — — — — — — — — — Typ — — — — — 0.042 0.065 16 1750 800 180 16 100 230 140 –1.0 100 Max — — –10 ±10 –2.0 0.055 0.095 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16 V, VDS = 0 ID = –1 mA, VDS = –10 V ID = –10 A, VGS = –10 V Note 4 ID = –10 A, VGS = –4 V Note 4 ID = –10 A, VDS = –10 V Note 4 VDS = –10 V VGS = 0 f = 1 MHz VGS = –10 V ID = –10 A RL = 3 Ω IF = –20 A, VGS = 0 IF = –20 A, VGS = 0 diF/dt = 50 A/µs Rev.4.00 Sep 07, 2005 page 2 of 8 Channel Dissipation Pch (W) 2SJ552(L), 2SJ552(S) Main Characteristics Power vs. Temperature Derating 80 60 40 20 0 0 50 100 150 200 Case Temperature Tc (°C) Drain Current ID (A) Typical Output Characteristics –50 –10 V –40 –8 V –6 V –5 V –4.5 V Pulse Test –4 V –30 –3.5 V –20 –3 V –10 VGS = –2.5 V 0 0 –2 –4 –6 –8 –10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –2.0 Pulse Test –1.6 –1.2 ID = –20 A –0.8 –0.4 –10 A –5 A –2 A 0 0 –4 –8 –12 –16 –20 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (V) Rev.4.00 Sep 07, 2005 page 3 of 8 Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) Drain Current ID (A) Maximum Safe Operation Area –1000 –300 –100 10 µs –30 –10 –3 –1 –0.3 DC Operation in this area is OPpWera=tio1n0(mTcs1=(11m02s5s0h°oCµts)) limited by RDS (on) Ta = 25°C –0.1 –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage VDS (V) Typical Transfer Characteristics –50 VDS = –10 V Pulse Test –40 –30 –20 –10 0 0 Tc = 75°C –1 –2 25°C –25°C –3 –4 –5 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 0.1 VGS = –4 V 0.05 0.02 –10 V 0.01 –1 –2 –5 –10 –20 –50 –100 Drain Current ID (A) 2SJ552(L), 2SJ552(S) Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.16 0.12 –10 A ID = –20 A 0.08 VGS = –4 V –5 A 0.04 –10 V –20 A –5 A, –10 A 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time 1000 Pulse Test 500 200 100 50 20 di / dt = 50 A / µs VGS = 0, Ta = 25°C 10 –0.1 –0.3 –1 –3 –10 –30 –100 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 0 VDD = –10 V –25 V –20 –50 V 0 –4 –40 VGS VDS –60 VDD = –10 V –25 V –50 V –80 ID = –20 A –100 0 16 32 48 64 Gate Charge Qg (nc) –8 –12 –16 –20 80 Gate to Source Voltage VGS (V) Switching Time t (ns) Capacitance C (pF) Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current 100 30 Tc = –25°C 10 25°C 3 75°C 1 0.3 VDS = –10 V Pulse Test 0.1 –0.1 –0.3 –1 –3 –10 –30 –100 Drain Current ID (A) 10000 Typical Capacitance vs. Drain to Source Voltage 3000 1000 300 Ciss Coss 100 Crss 30 VGS = 0 f = 1 MHz 10 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) 1000 500 200 100 50 Switching Characteristics VGS = –10 V, VDD = –30 V PW = 10 µs, duty ≤ 1 % td(off) tf tr 20 td(on) 10 –0.1 –0.3 –1 –3 –10 –30 –100 Drain Current ID (A) Rev.4.00 Sep 07, 2005 page 4 of 8 2SJ552(L), 2SJ552(S) Reverse Drain Current vs. Source to Drain Voltage.


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