Document
2SJ552(L), 2SJ552(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0899-0400 (Previous: ADE-208-651B)
Rev.4.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.042 Ω typ.
• Low drive current. • 4 V gate drive devices. • High speed switching.
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
4
D
1 23
123
G S
1. Gate 2. Drain 3. Source 4. Drain
Rev.4.00 Sep 07, 2005 page 1 of 8
2SJ552(L), 2SJ552(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID ID (pulse) Note 1
IDR IAP Note 3 EAR Note 3 Pch Note 2
Tch
Tstg
Value –60 ±20 –20 –80 –20 –20 34 75 150 –55 to +150
(Ta = 25°C) Unit
V V A A A A mJ W °C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time
Note: 4. Pulse test
Symbol V (BR) DSS V (BR) GSS
IDSS IGSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on)
tr td (off)
tf VDF trr
Min –60 ±20 — — –1.0 — — 10 — — — — — — — — —
Typ — — — — — 0.042 0.065 16 1750 800 180 16 100 230 140 –1.0 100
Max — — –10 ±10 –2.0 0.055 0.095 — — — — — — — — — —
Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns
(Ta = 25°C) Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16 V, VDS = 0 ID = –1 mA, VDS = –10 V ID = –10 A, VGS = –10 V Note 4 ID = –10 A, VGS = –4 V Note 4 ID = –10 A, VDS = –10 V Note 4 VDS = –10 V VGS = 0 f = 1 MHz
VGS = –10 V ID = –10 A RL = 3 Ω
IF = –20 A, VGS = 0 IF = –20 A, VGS = 0 diF/dt = 50 A/µs
Rev.4.00 Sep 07, 2005 page 2 of 8
Channel Dissipation Pch (W)
2SJ552(L), 2SJ552(S)
Main Characteristics
Power vs. Temperature Derating 80
60
40
20
0 0 50 100 150 200 Case Temperature Tc (°C)
Drain Current ID (A)
Typical Output Characteristics
–50 –10 V
–40
–8 V
–6 V –5 V
–4.5 V Pulse Test
–4 V
–30 –3.5 V
–20
–3 V –10
VGS = –2.5 V
0 0 –2 –4 –6 –8 –10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
–2.0
Pulse Test
–1.6
–1.2
ID = –20 A –0.8
–0.4
–10 A –5 A
–2 A
0 0 –4 –8 –12 –16 –20
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
Rev.4.00 Sep 07, 2005 page 3 of 8
Static Drain to Source on State Resistance RDS (on) (Ω)
Drain Current ID (A)
Drain Current ID (A)
Maximum Safe Operation Area
–1000
–300
–100
10 µs
–30 –10
–3 –1 –0.3
DC
Operation in this area is
OPpWera=tio1n0(mTcs1=(11m02s5s0h°oCµts))
limited by RDS (on)
Ta = 25°C
–0.1 –0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–50 VDS = –10 V Pulse Test
–40
–30
–20
–10 0 0
Tc = 75°C –1 –2
25°C –25°C –3 –4
–5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
1 Pulse Test
0.5
0.2
0.1 VGS = –4 V
0.05 0.02
–10 V
0.01 –1
–2 –5 –10 –20 –50 –100 Drain Current ID (A)
2SJ552(L), 2SJ552(S)
Static Drain to Source on State Resistance RDS (on) (Ω)
Static Drain to Source on State Resistance vs. Temperature
0.20 Pulse Test
0.16
0.12
–10 A ID = –20 A
0.08 VGS = –4 V
–5 A
0.04
–10 V
–20 A –5 A, –10 A
0 –40 0
40 80 120 160
Case Temperature Tc (°C)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse Recovery Time
1000 Pulse Test
500
200
100
50
20 di / dt = 50 A / µs VGS = 0, Ta = 25°C
10 –0.1 –0.3 –1 –3 –10 –30 –100
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
0 VDD = –10 V –25 V
–20 –50 V
0 –4
–40 VGS VDS
–60 VDD = –10 V –25 V –50 V
–80
ID = –20 A –100
0 16 32 48 64
Gate Charge Qg (nc)
–8
–12
–16
–20 80
Gate to Source Voltage VGS (V) Switching Time t (ns)
Capacitance C (pF)
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs. Drain Current
100
30 Tc = –25°C
10 25°C
3 75°C
1
0.3 VDS = –10 V Pulse Test
0.1 –0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
10000
Typical Capacitance vs. Drain to Source Voltage
3000 1000
300
Ciss Coss
100 Crss
30 VGS = 0 f = 1 MHz
10 0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
1000 500
200 100
50
Switching Characteristics
VGS = –10 V, VDD = –30 V PW = 10 µs, duty ≤ 1 %
td(off) tf
tr
20 td(on) 10 –0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 4 of 8
2SJ552(L), 2SJ552(S)
Reverse Drain Current vs. Source to Drain Voltage.