2SK1170

2SK1169, 2SK1170 Silicon N Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0916-0200 (Previous: ADE-208-1254) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1169, 2SK1170 Absolute Maximum Ratings Item Drain to source voltage 2SK1169 2SK1170 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 450 500 ±30 20 80 20 120 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics Item Symbol Drain to source breakdown voltage 2SK1169 2SK1170 V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current IGSS Zero gate voltage drain 2SK1169 current 2SK1170 IDSS Gate to source cutoff voltage VGS(off) Static drain to source on 2SK1169 state resistance 2SK1170 RDS(on) Forward transfer admittance |yfs| Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Body to drain diode forward ...